Tokyo Electron Limited

Shogo Fukui

Gentaro Goshi

Tomohito Ura

Hidetaka Shinohara

Shuuichi Nishikido

Seiki Ishida

Hiromi Kiyose

Kazuki Kosai

Yasuhiro Takaki

Takuro Masuzumi

Satoshi Okamura

Noritaka Uchida

Masataka Gosho

Kento Tsukano

Takanori Obaru

Shinichi Umeno

Atsushi Anamoto

Yusuke Takamatsu

Seiya Fujimoto

Hideaki Udou

Takahito Nakashoya

Yuya Motoyama

Pohan Huang

Katsuya Nakata

Yudai Takanaga

So Osada

An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.

Substrate processing apparatus and substrate processing method having enhanced configuration of replenishing processing liquid

A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus performs a drying process for drying a substrate with a liquid film formed on a pattern formation surface thereof, using a processing fluid in a supercritical state. The substrate processing apparatus includes a processing container, a holder, and a processing liquid supply. The processing container accommodates the substrate. The holder holds the substrate inside the processing container. The processing liquid supply supplies a processing fluid into the processing container. Further, the holder includes a base, a plurality of support members, and a lifting mechanism. The base is disposed below the substrate. The plurality of support members are provided on the base, and support the substrate from below. The lifting mechanism moves the plurality of support members up and down.

Substrate processing apparatus and substrate drying method

A liquid supply device includes: a storage tank configured to store a processing liquid including a first processing liquid (sulfuric acid) and a second processing liquid (hydrogen peroxide solution); a circulation path having a first pipeline through which the processing liquid passes in a horizontal direction, and configured to circulate the processing liquid stored in the storage tank; a branch path configured to supply the processing liquid to a processing unit; and a branching part having an opening for allowing the processing liquid to flow out from the first pipeline to the branch path, wherein the opening is formed in the branching part and formed below a periphery of the first pipeline when the first pipeline is viewed in section.

Liquid supply device and liquid supply method

There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

Method of cleaning substrate processing apparatus, and substrate processing system

A method of removing particles of a substrate processing apparatus includes a pressure increasing process, a circulating process, and a particle removing process. In the pressure increasing process, a pressure in a processing space is increased by supplying a cleaned fluid from a first supply line to the processing space in a state where a second on-off valve and a third on-off valve are closed. In the circulating process, a processing fluid is supplied from a second supply line to the processing space and discharged from a discharge line by opening the second on-off valve and the third on-off valve after the pressure increasing process. In the particle removing process, a flow of the cleaned fluid is generated against the pressure of the processing space in the second supply line by opening and closing the second on-off valve during the pressure increasing process.

Method of removing particles of substrate processing apparatus, and substrate processing apparatus

In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

Substrate processing method, recording medium and substrate processing system

Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unitstops a supply of the processing liquid onto the top surface of the substrate by a first processing liquid supply device, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a second processing liquid supply device

Substrate processing apparatus, substrate processing method and recording medium

Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

Substrate processing apparatus, substrate processing method and storage medium

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Koshi, Japan

Shogo Fukui