Shanghai Huali Microelectronics Corporation

Shanghai Huali Integrated Circuit Corporation

Shirui Yu

Lin Nan Li

Xuan Zhao

Juan Liu

Jiaqi Liu

Yiqun Tan

The application discloses a method for manufacturing a photomask, firstly determining a main pattern area of a photomask substrate and an auxiliary pattern area around the main pattern area; performing optical intensity simulation on patterns of the main pattern area and the auxiliary pattern area by means of an optical proximity correction (OPC) model, so as to ensure that the pattern of the auxiliary pattern area is not exposed on a photoresist on a wafer and the pattern of the main pattern area is exposed on the photoresist on the wafer during the integrated circuit manufacturing process; screening out a set of auxiliary pattern parameters; and forming the pattern of the main pattern area on the photomask substrate by means of a photomask manufacturing etching process, and forming the pattern of the auxiliary pattern area on the photomask substrate according to the auxiliary pattern parameters. The application also discloses a photomask.

Method for manufacturing photomask and photomask

The present invention provides an image processing method for CDSEM for determining a measuring range of an image of a target pattern measured by a CDSEM machine. The image processing method of CDSEM comprises: obtaining a first gray scale image based on the image of the target pattern; performing Fourier transform to the first gray scale image to obtain a first frequency spectrum distribution; filtering out frequency spectrum components whose absolute values of ordinate are greater than preset threshold in the first frequency spectrum distribution to obtain a second frequency spectrum distribution, the preset threshold relates to the background noise and the signal frequency of SRAF features; and determining the measuring range based on the second frequency spectrum distribution.

Image processing method and device for CDSEM

A hotspot correction method is provided. The layout patterns in the hotspot regions are accurately corrected by using an ILT method. Then the layout patterns in the extension regions are corrected by using an OPC method. As a result, the layout patterns in the hotspot regions can be accurately corrected while pattern distortion of the extension regions generated due to the regional ILT correction can be prevented. Moreover, high demanding of calculation capability and long calculation time of global ILT correction can be avoided.

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Shanghai, China

Shirui Yu