Shin-etsu Handotai Co., Ltd.

Shiro Amagai

Yuki Tanaka

Yoshihiro Usami

Shigeru Oba

A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0&#x2264;A+B&#x2264;2.0 and A/B&#x3e;1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD&#x3c;0 while controlling the GBIR value to be equal to or smaller than a required value.

Double-side polishing method and double-side polishing apparatus

A method for manufacturing a semiconductor wafer including: slicing off a plurality of wafers from an ingot; chamfering outer peripheral portions of the plurality of sliced wafers; and performing double-side polishing to polish both surfaces of each wafer whose outer peripheral portion is held by a carrier, wherein includes performing warp direction adjustment to uniform directions of warps of the plurality of wafers in one direction after the slicing and before the chamfering, and the chamfering and the double-side polishing are performed in a state where the directions of the warps of the plurality of wafers are uniformed in one direction after the warp direction adjustment. Consequently, it is possible to provide the method for manufacturing a semiconductor wafer which can suppress degradation of flatness of the double-side polished wafers even in case of uniforming the directions of the warps of the wafers in one direction before the double-side polishing.

Method for manufacturing semiconductor wafer

A sizing device in a polishing apparatus for measuring a thickness of a wafer in course of polishing by laser beam interference, includes: a light-source for irradiating the wafer in course of polishing with a laser beam, a light-receiving portion for receiving reflected light from the wafer in course of polishing irradiated with the laser beam from the light-source, a calculating part for calculating a measured value of the thickness of the wafer in course of polishing irradiated with the laser beam based on the reflected light received through the light-receiving portion. The calculating part can calculate the wafer thickness in course of polishing by calculating a measuring error value of the wafer thickness in course of polishing from resistivity of the wafer in course of polishing based on a previously determined correlation between wafer resistivity and measuring error value of wafer thickness, and by compensating the measuring error value.

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Nishigo-mura, Japan

Shiro Amagai