Asm IP Holding B.v.

Shinya Yoshimoto

Toshihisa Nozawa

Jun Yoshikawa

Yukihiro Mori

Hideaki Fukuda

Timothee Blanquart

Takahiro Onuma

Makoto Igarashi

Rene Henricus Jozef Vervuurt

Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method

In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

Methods and apparatuses for flowable gap-fill

Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

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Tama, Japan

Shinya Yoshimoto