Tokyo Electron Limited

Shinya Shima

Takehiro Ueda

Kimihiro Higuchi

Kaoru Oohashi

Akihiro Kikuchi

Yuichiro Sakamoto

Tadashi Gondai

Munehiro Shibuya

Satoshi Kayamori

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Plasma processor and plasma processing method

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of, e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Plasma procesor and plasma processing method

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Yamanashi, Japan

Shinya Shima