Tokyo Electron Limited

Shinya Nasukawa

Kazuyuki Kikuchi

Tatsuya Yamaguchi

Hirofumi Kaneko

Hiromi Nitadori

Yasuaki Kikuchi

Kazuteru Obara

Masato Kadobe

Ryuji Kusajima

A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Heat treatment apparatus and film deposition method

A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

Processing apparatus

Growing community of inventors

Oshu, Japan

Shinya Nasukawa