Central Glass Company, Limited

Shinya Ikeda

Akifumi Yao

Hiroyuki Oomori

Masakiyo Nagatomo

Tatsunori Kamida

A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CFI and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CFI is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

Dry etching method, and dry etching agent and storage container therefor

The method for producing a filled container of the present invention includes: providing a metal storage container, at least an inner surface of which is formed of a manganese steel and in which the inner surface has a surface roughness Rof 10 &#x3bc;m or less; performing fluorination by bringing the inner surface of the storage container into contact with a gas containing at least one first fluorine-containing gas selected from the group consisting of ClF, IF, BrF, F, and WFat 50&#xb0; C. or lower; purging the inside of the storage container with an inert gas; and filling the inside of the storage container with at least one second fluorine-containing gas selected from the group consisting of ClF, IF, BrF, F, and WF.

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Ube, Japan

Shinya Ikeda