Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Shinya Ebata

Hiroaki Hiramatsu

Toru Kagaya

Yusaku Okajima

Koei Kuribayashi

Shuhei Saido

Tsukasa Kamakura

Takaaki Noda

Takafumi Sasaki

Kenji Kameda

Takatomo Yamaguchi

Takeo Hanashima

Sadao Hisakado

Hiroto Yamagishi

There is provided a technique that includes: forming a nitride film containing a predetermined element on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including sequentially performing: (a) supplying a first precursor gas containing a molecular structure containing the predetermined element to the substrate with a pressure of the process chamber being set to a first pressure; (b) supplying a second precursor gas, which is different from the first precursor gas and contains a molecular structure containing the predetermined element and not containing a bond between atoms of the predetermined element, to the substrate with the pressure of the process chamber being set to a second pressure higher than the first pressure; and (c) supplying a nitriding agent to the substrate.

Method of manufacturing semiconductor device, method of processing substrate, recording medium, and substrate processing apparatus

A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes a reaction vessel including a first region in which a substrate is arranged and a second region in which no substrate is arranged; a heater configured to heat the first region; a gas supplier configured to supply a plurality of gases including cleaning gases; and a controller that controls at least one selected from the group of the gas supplier, the heater, and a cooler to clean the first region and the second region under different conditions by at least one method selected from the group of a method in which the gas supplier supplies two different kinds of cleaning gases, a method in which the gas supplier supplies one or more cleaning gases from two different locations, and a method in which the heater sets a temperature differently between the first region and the second region.

Apparatus and method for cleaning reaction vessel for processing substrate

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

There is provided a technique that includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor gas from a first supplier to the substrate in the process chamber; and (b) supplying a reaction gas from a second supplier to the substrate in the process chamber, wherein in (a), an intermediate is generated by decomposing the precursor gas in the first supplier and in the process chamber, the intermediate is supplied to the substrate, and a decomposition amount of the precursor gas in the first supplier is set larger than a decomposition amount of the precursor gas in the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Inlet liner for substrate processing apparatus

A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply pan while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Gas nozzle for substrate processing apparatus

Reaction tube

The method of the present invention is related to a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. The method of the present invention includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.

Growing community of inventors

Toyama, Japan

Shinya Ebata