Kabushiki Kaisha Toshiba

Shintaro Yoshii

Yoshiaki Matsushita

Masanobu Ogino

Mokuji Kageyama

Moriya Miyashita

Ayako Maeda

Hachiro Hiratsuka

Keiko Sakuma

A drop which is hydrophobic to the surface of an object to be measured is dropped on the surface of the object and moved so as to be brought into contact with the overall surface of the object to be measured. After the movement, the drop is recovered and analyzed by chemical analysis to measure the kind of element and content of an impurity adsorbed on the surface of the object to be measured.

Impurity measuring method

When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which the ultrasonic waves propagated, the damages serving as a back side damage.

Gettering method for a semiconductor wafer

A semiconductor device is provided having as an insulating oxide film a silicon oxide film containing a metal, such as iron or chromium, of an average concentration of 1.times.10.sup.16 atoms/cm.sup.3 to 1.times.10.sup.19 atoms/cm.sup.3 which can be readily trapped therein.

Insulation film for a semiconductor device

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Tokyo, Japan

Shintaro Yoshii