Asm IP Holding B.v.

Asm Japan K.k.

Shintaro Ueda

Akinori Nakano

Dai Ishikawa

Kiyohiro Matsushita

Atsuki Fukazawa

Hirofumi Arai

Jeongseok Ha

Hisashi Tazawa

A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si&#x2014;N bond in its molecule without applying electromagnetic energy to increase Si&#x2014;O bonds and/or Si&#x2014;C bonds in the film; and then curing the low-k SiOCH film.

Method for forming SiOCH film using organoaminosilane annealing

A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Method for filling recesses using pre-treatment with hydrocarbon-containing gas

A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Method for treating SiOCH film with hydrogen plasma

A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer.

Atomic layer deposition for controlling vertical film growth

A thin film is formed by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using a reactant gas and a plasma, wherein the reactant gas is supplied substantially uniformly over the substrate, and the plasma is pulse-time-modulated and applied in the process of supplying the reactant gas.

Method of depositing film by atomic layer deposition with pulse-time-modulated plasma

A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si&#x2014;C bond nor a C&#x2014;C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at &#x2212;50&#xb0; C. to 100&#xb0; C.

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Tama, Japan

Shintaro Ueda