Hitachi, Ltd.

Tanaka Denshi Kogyo Kabushiki Kaisha

Shinji Shirakawa

Keiichi Mashino

Toshiyuki Innami

Akira Mishima

Junichi Sakano

Kenji Hara

Masahiro Iwamura

Shinichi Fujino

Masamitsu Inaba

Hideshi Fukumoto

Hiromichi Anan

Masanori Tsuchiya

Katsuyuki Toyofuku

Ichiro Nagamatsu

Hiroto Iga

Kensei Murakami

Takeshi Kujiraoka

Takashi Kobayashi

Mutsuhiro Mori

Tatsumi Yamauchi

Noriaki Hino

Hiroshi Kanazawa

Yoshitaka Ochiai

Osamu Suzuki

Kenji Takahashi

Daisuke Matsumoto

Hideaki Mori

Satoru Shigeta

Hiroshi Kamizuma

Yukio Hattori

Akira Mima

Yuuji Maeda

Taiga Arai

Keiji Kunii

A module of conversion circuit includes a High side IGBT, a Low side IGBT connected in series to the High side IGBT, a first terminal connected to the High side IGBT, a second terminal connected to the Low side IGBT, a capacitor connected to the first terminal and the second terminal, and a third terminal connected to a connection point between the High side IGBT and the Low side IGBT. A fourth terminal is engaged with the first terminal. A fifth terminal is engaged with the second terminal. A sixth terminal is engaged with the third terminal. The first and second terminals have at portions thereof between front edges and rear edges high-resistance parts having higher resistance than other portions.

Power conversion apparatus including terminals having higher resistance portions

A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.

Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus

The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the latch-up prevention layer lowered in impurity density or removed.

Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device

A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.

In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cmor less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.

Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same

V-phase upper-arm open phase detecting circuit outputs a permission signal to allow U-phase lower-arm MOSFET to be conductive when the V-phase voltage is higher than the positive electrode potential. In response to this permission signal, U-phase lower-arm driver circuit drives U-phase lower-arm MOSFET. V-phase lower-arm open phase detecting circuit outputs a permission signal to allow U-phase upper-arm MOSFET to be conductive when the V-phase voltage is lower than the negative electrode potential. In response to this permission signal, U-phase upper-arm driver circuit drives U-phase upper-arm MOSFET. Thereby, a MOS rectifying device capable of rectifying even when an open phase occurs, a driving method thereof, and a motor vehicle using thereof can be provided.

MOS rectifying device, driving method thereof, and motor generator and motor vehicle using thereof

An AC generator comprises a rotor and a stator having a three-phase winding. A three-phase inverter is connected to the three-phase winding. Here, the three-phase winding comprises at least two independent three-phase windings. Switching elements for respective phases of the three-phase inverter are connected in parallel by the number of the independent three-phase windings, and in-phase windings are individually connected to their parallel switching elements.

Driving/electric-power generating system for vehicle

A generator having a field coil L, and an SWcontrol circuitfor controlling field current flowing through the field coil L. When a generating operation of the generator is to be ended, a switchSWis turned off to interrupt the field current flowing through the field coil L, and a switchSWis turned off to allow the field current remaining the field coil L to the current path including a resistance elementwith a resistance element capable of quickly attenuating the field current.

Generating apparatus and motor control apparatus

An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.

Vehicle rotating electric machine

In order to provide an interface circuit, a power converter using the same and an electric vehicle using the same, wherein this interface circuit ensures improved control reliability without employing a photo-coupler, an interface circuitA transfers control signals to the power transistor in a large-current circuitfrom a small-signal circuitfor driving a power transistor. The interface circuitA has a noise absorberthat electrically absorbs a noise voltage produced between the ground of the small-signal circuitand that of the power transistor. The noise absorbertransfers to the power transistor the control signals generated by the small-signal circuit, without being affected by the noise voltage if produced.

Interface circuit with power converter with interface circuit and electric vehicle with power converter

The present invention provides a semiconductor device which reduces an inductance of wiring for bridge-connecting semiconductor switches and realizes a reduction in size. Within the semiconductor device formed are two controllable bridge-connected semiconductor switchesand, an output terminal, positive/negative polarity DC terminalsand, and an insulating substratein which conductor layersandhaving a conductor section and in an inner layer for bridge-connecting the semiconductor switches to the DC terminals on a surface thereof and insulating layersandare alternately laminated. The surface and inner-layer conductor layersandwhich interpose the insulating layertherebetween are electrically connected by a conductorpassing through the insulating layerinterposed between the conductor layersand. A current path (dotted line) is so provided as to allow current flowing through a bridge circuit for mounting the two semiconductor switches on the insulating substrate to flow in opposite directions between the conductor layersandwhich interpose the insulating layertherebetween.

Semiconductor device having bridge-connected wiring structure

A positive side conductor and a negative side conductor of an input terminal electrically connected to semiconductor elements, are electrically insulated from each other, and are laminated with each other, and the input terminal having such a laminated structure, an output terminal and substrates mounted thereon the semiconductor elements are arranged in a checkered pattern in a container. Further, the semiconductor elements mounted on the substrates, the input terminal and the output terminal are electrically connected to one another so as to obtain a loop-like electric path on a conductive member, thereby it is possible to aim at miniaturizing the power conversion apparatus and lowering the inductance thereof.

Power conversion apparatus and mobile object incorporating thereof

A semiconductor apparatus includes positive and negative side conductors for bridge-connecting semiconductor switches, constituted to a wide conductor, and laminated by sandwiching an insulator between them. A semiconductor apparatus includes positive and negative side conductors extended from its case, and an electrolytic capacitor connected to the extension portion of the positive and negative side conductors. A power converter uses the semiconductor apparatus.

Semiconductor apparatus, power converter and automobile

In an electric power conversion/inversion apparatus, including, such as an inverter therein, for obtaining reduction in circuit inductance and wiring resistance therein by bringing small as a whole, having good installability and high reliability and efficiency of electric power conversion, as well, semiconductor chips are disposed, being put between a positive input bus bar and a negative input bus bar and plural output bus bars at crossing positions thereof, and are connected electrically and thermally, to the positive input bus bar in a pole direction consistent therewith while to the negative input bus bar in a pole direction consistent therewith, and further to the common output bus bars in pole directions being different from side by side.

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Hitachi, Japan

Shinji Shirakawa