Tokyo Electron Limited

Intel Corporation

Shinji Okada

Masatoshi Deguchi

Masatoshi Shiraishi

Nobuaki Matsuoka

Masami Yamashita

Hikaru Ito

Xavier Francois Brun

Tsunenaga Nakashima

Toyohisa Tsuruda

Mitsuhiro Tanoue

Charles Wayne Singleton, Jr

Kabirkumar Mirpuri

Hiroyuki Kudoh

Hideto Mori

Kenji Urata

A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

Separation method, computer storage medium, and separation system

This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent for removing the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

Joining method and joining system

The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.

Substrate processing apparatus, method for processing substrate, and storage medium

When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.

Joint method, joint apparatus and joint system

An experiment is conducted in advance, for finding a temperature of a cooling plate attained as a result of balancing between a temperature of a substrate after heat treatment and a temperature of the cooling plate at the time of cooling of the substrate. Then, before heat treatment of a first substrate, the cooling plate is moved to a position above a hot plate, the cooling plate is heated to that temperature, and thereafter heat treatment of the substrate is started.

Heat treatment apparatus, heat treatment method, and recording medium storing computer program carrying out the same

A processing block Sincludes unit blocks, a BCT layer B, COT layer Band TCT layer B, for forming coating films, and further includes DEV layers B, Blayered with the unit blocks B, B, Band used as unit blocks for a developing process. Beside the unit blocks Bto B, a group G of transfer sections comprising transfer sections adapted to transfer each wafer W with each main arm Ato Aof the unit block Bto Band hydrophobicity rendering units adapted to provide a hydrophobicity rendering process to the wafer W is provided. The wafer W is transferred by a transfer arm D between the transfer sections and the hydrophobicity rendering units. In this case, since it is not necessary to transfer the wafer W to the hydrophobicity rendering unit by using, for example, a main arm Aof a COT layer B, the load on the arm Acan be reduced, thereby enhancing the carrying throughput.

Coating and developing apparatus, and coating and developing method

In a nozzle unitequipped with processing-liquid nozzlesA toJ, an air layerand a solvent layerfor processing liquid are successively formed outside a processing-liquid layerincluded in the tip of each nozzleA (B toJ). Next, the solvent layerin the nozzleA is thrown out into a drain partof a standby unitand subsequently, the processing liquid is supplied from the nozzleA to the surface of a wafer W, performing a coating process. After completing the coating process, the processing liquid remaining in the nozzleA is sucked and continuously, respective tips of the nozzlesA toJ are dipped into respective solvents in solvent reservoirA toJ, respectively. From this state, by sucking in the nozzleA, there are newly formed, outside the processing layerin the tip of the nozzleA, an air layerand a solvent layerThus, in supplying a substrate, such as semiconductor wafer, with a processing liquid by use of a nozzle unit having a plurality of processing-liquid nozzles integrated, it is possible to prevent dryness of the processing liquids in the respective nozzles while preventing the nozzle unit from being large-sized.

Growing community of inventors

Koshi, Japan

Shinji Okada