Gigaphoton Inc.

Komatsu Corporation

Ebara Corporation

Kabushiki Kaisha Topcon

Gigaphton Inc.

Shinji Nagai

Osamu Wakabayashi

Kouji Kakizaki

Tamotsu Abe

Akira Endo

Takanobu Ishihara

Yoshifumi Ueno

Tatsuya Yanagida

Hitoshi Nagano

Fumika Yoshida

Atsushi Ueda

Hakaru Mizoguchi

Hideo Hoshino

Takeshi Asayama

Georg Soumagne

Takeshi Murakami

Masahiro Inoue

Junichi Fujimoto

Hiroshi Sobukawa

Kiwamu Takehisa

Hiroshi Komori

Takashi Saito

Tatsuo Enami

Toru Suzuki

Takayuki Yabu

Toshihiro Nishisaka

Takahito Kumazaki

Yutaka Shiraishi

Akira Sumitani

Satoshi Tanaka

Takeshi Ohta

Koji Kakizaki

Yoshiyuki Honda

Kouji Ashikawa

Hirokazu Kubo

Gota Niimi

Tatsumi Gotou

Yasuaki Iwata

Kouji Shio

Hiroaki Tomuro

A tin trap device for collecting tin in a chamber device which causes tin to be turned into plasma with laser light in an internal space thereof may include a housing provided with a gas inlet port through which exhaust gas in the chamber device flows and a gas exhaust port through which the exhaust gas is exhausted; and a main heater arranged in the housing, configured to have a temperature equal to or higher than the melting point of tin and lower than the boiling point thereof, and having a projection surface projected toward a direction in which the exhaust gas flows in the gas inlet port cover the gas inlet port.

Tin trap device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method

An extreme ultraviolet light generation apparatus may include a chamber causing a target substance to be turned into plasma with laser light, a light concentrating mirror concentrating extreme ultraviolet light generated by the turning of the target substance into plasma, a gas supply unit supplying gas into the chamber, a magnetic field generation unit generating a magnetic field including a magnetic field axis that crosses a light path of the extreme ultraviolet light, a first exhaust port arranged at a position through which the magnetic field axis passes in the chamber, a second exhaust port arranged at a position opposite to the light concentrating mirror in the chamber, and a gas exhaust amount adjustment unit adjusting a ratio between an exhaust amount of first exhaust gas exhausted from the first exhaust port and an exhaust amount of second exhaust gas exhausted from the second exhaust port.

Extreme ultraviolet light generation apparatus and electronic device manufacturing method

An extreme ultraviolet light generation device configured to generate extreme ultraviolet light by irradiating a target containing tin with a pulse laser beam includes a chamber container, a hydrogen gas supply unit configured to supply hydrogen gas into the chamber container, a heat shield disposed between the chamber container and a predetermined region in which the target is irradiated with the pulse laser beam inside the chamber container, a first cooling medium flow path disposed in the chamber container, a second cooling medium flow path disposed in the heat shield, and a cooling device configured to supply a first cooling medium to the first cooling medium flow path and supply a second cooling medium to the second cooling medium flow path so that a temperature of the heat shield becomes lower than a temperature of the chamber container.

Extreme ultraviolet light generation device and electronic device manufacturing method

An extreme ultraviolet light generation apparatus includes: a chamber in which plasma is generated from a target substance at a condensation position of a laser beam; a condenser mirror configured to condense extreme ultraviolet light generated by the plasma; and a magnetic field generation unit configured to generate a magnetic field that converges a charged particle generated by the plasma toward a wall of the chamber, the condenser mirror includes a substrate, a reflective layer, and a protective layer provided on the reflective layer, the protective layer has layer thickness distribution in which a layer thickness of the protective layer from a reflective layer surface changes, and the layer thickness of the protective layer is maximum at a position on a line (CL) on which a plane passing through a magnetic field axis of the magnetic field generation unit and a central axis (CA) of the condenser mirror intersects the reflective layer surface (F).

Extreme ultraviolet light generation apparatus

An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction, unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

An extreme ultraviolet light generating device may include a chamber, an EUV light focusing mirror provided therein, including a reflection surface having a concave curved shape and an outer peripheral portion around an outer edge of the reflection surface, and configured to focus EUV light radiated from plasma generated when a target is irradiated with laser light, a gas supplying device including peripheral heads provided on or along the outer peripheral portion; and a discharge device including a discharge path forming a discharge port near the outer peripheral portion, and configured to discharge an ion or a particle from the discharge port. The peripheral heads each may blow out a gas flow from the outer peripheral portion or a vicinity thereof along the reflection surface, and allow gas flows to join on the reflection surface to thereby form a gas flow along the reflection surface toward the discharge port.

Extreme ultraviolet light generating device

An extreme ultraviolet light generation device may include a chamber in which extreme ultraviolet light is generated from plasma, the plasma generated by irradiation of a target supplied in a plasma generation region inside of the chamber with laser light; a condenser mirror collecting the extreme ultraviolet light and guiding it to outside of the chamber; a first etching gas supply unit blowing an etching gas to a reflective surface of the condenser mirror and the plasma generation region; a magnet forming a magnetic field in the chamber; a port that intersects a central axis of the magnetic field and that takes in suspended substances generated in the chamber; and an ejection path that is in communication with the port and that ejects the suspended substances taken from the port to the outside of the chamber.

Extreme ultraviolet light generation device

An extreme ultraviolet light generation apparatus may include a chamber, a target supply device configured to successively supply targets into the chamber, and an extreme ultraviolet light collector mirror including a reflective surface having a through-hole at the center thereof. The reflective surface may reflect and collect extreme ultraviolet light generated at a predetermined emission cycle because of irradiation of the successively supplied targets with a laser beam. A gas ejection device may be disposed in the through-hole to jut out from the reflective surface and have a gas ejection opening to eject etching gas for debris onto the reflective surface. The gas ejection device may be configured so that the etching gas takes a longer time than the predetermined emission cycle to reach the through-hole-side end of effective reflective area of the reflective surface after being ejected from the gas ejection opening.

Extreme ultraviolet light generation apparatus and method of designing the same

An extreme ultraviolet light generation device is to generate extreme ultraviolet light by irradiating a target with a pulse laser beam and thereby turning the target into plasma. The device may include a chamber, a magnet configured to form a magnetic field in the chamber, and an ion catcher including a collision unit disposed so that ions guided by the magnetic field collide with the collision unit.

A cleaning method for an EUV light generation apparatus may include closing a connection portion so that a chamber interior and the interior of an exposure apparatus do not communicate when EUV light is not being generated, supplying an etchant gas for etching debris that has accumulated on a reflective surface of an optical element to the chamber interior in a state where the connection portion is closed, and exhausting the chamber interior using an exhaust apparatus while supplying the etchant gas.

Cleaning method for EUV light generation apparatus

A chamber apparatus used with a laser apparatus may include: a chamber provided with at least one inlet through which a laser beam outputted from the laser apparatus enters the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a magnetic field generation unit for generating a magnetic field in the predetermined region; and a charged particle collection unit disposed in a direction of a magnetic flux of the magnetic field for collecting a charged particle thereinto, the charged particle being generated when the target material is irradiated with the laser beam inside the chamber and traveling along the magnetic flux.

Chamber apparatus and extreme ultraviolet light generation system

An extreme ultraviolet light source apparatus generating an extreme ultraviolet light from plasma generated by irradiating a target material with a laser light within a chamber, and controlling a flow of ions generated together with the extreme ultraviolet light using a magnetic field or an electric field, the extreme ultraviolet light source apparatus comprises an ion collector device collecting the ion via an aperture arranged at a side of the chamber, and an interrupting mechanism interrupting movement of a sputtered particle in a direction toward the aperture, the sputtered particle generated at an ion collision surface collided with the ion in the ion collector device.

Extreme ultraviolet light source apparatus

A degree of polarization control device includes:

Polarization purity control device and gas laser apparatus provided with the same

Growing community of inventors

Hiratsuka, Japan

Shinji Nagai