Matsushita Electric Industrial Co., Ltd.

Matsushita Electrical Industrial Do., Ltd.

Shinichi Oki

Yoshiro Nakata

Koichi Nagao

Fumiyasu Konno

Takashi Sato

Kenzo Hatada

Kunio Sano

Toshihiko Ohashi

Masaaki Ishizaka

Hiroshi Yagi

Takahiro Nakauma

Shigeoki Mori

A method of testing semiconductor integrated circuits comprises the step of simultaneously testing a plurality of semiconductor integrated circuit elements for electric characteristics by applying a voltage to the respective testing electrodes of the semiconductor integrated circuit elements. The simultaneous testing step includes the step of applying the voltage to the respective testing electrodes of the semiconductor integrated circuit elements via PTC elements provided for the semiconductor integrated circuit elements in a one-to-one relationship.

Method of testing semiconductor integrated circuits and testing board for use therein

A probe card is used in testing an electric characteristic of plural semiconductor chips formed on a semiconductor wafer in a batch at a wafer level through application of a voltage to electrodes of the semiconductor chips. The probe card includes a card body, plural probe terminals, a wiring and a control element. The plural probe terminals are disposed on one surface of the card body in positions corresponding to the electrodes of the semiconductor chips. The wiring is disposed on the other surface of the card body and electrically connected with the probe terminals. The control element is disposed on the latter surface of the card body between the wiring and the probe terminals and controls input/output of the semiconductor chips.

Probe card

A wafer tray has a wafer mount portion for carrying a semiconductor wafer formed with a plurality of semiconductor chips. A probe card composed of an elastic material and disposed in opposing relation to the wafer mount portion of the wafer tray has bumps to be connected to the respective electrode pads of the semiconductor chips on the top surface thereof. A holding board is provided to hold the back surface of the probe card. An annular sealing member is disposed on the wafer tray externally of the wafer mount portion and defines a first sealed space in combination with the wafer tray and the probe card. The probe card has connection holes for connecting the first sealed space to a second sealed space formed between the probe card and the holding board.

Wafer burn-in cassette and method of manufacturing probe card for use therein

Method of testing electrical characteristics of multiple semiconductor integrated circuits simultaneously

Bumps to be connected to inspection electrodes of semiconductor chips are formed on a surface of a flexible substrate. A plating layer is formed which is made of a harder material than the bumps formed on the flexible substrate and which has a concave portion or a convex portion whose diameter is equal to or smaller than half the diameter of the bumps, on a flat metallic plate. The plating layer of the metallic plate is pressed against top surfaces of the bumps, so that irregularities are formed in the top surfaces of the bumps.

Method of manufacturing probe card

A plated layer made of a metal which is hard to oxidize is formed on the surface of a check electrode of a semiconductor chip which is formed on a semiconductor wafer. A bump of a contactor is caused to come in contact with the check electrode on which the plated layer is formed in the direction perpendicular to the semiconductor chip. Then, a voltage is applied to the bump of the contactor to make a check such as burn-in on the semiconductor chip in a lump.

Semiconductor device checking method

A semiconductor wafer is affixed on a dicing sheet having an appropriate expansibility. Then, a dicing operation is performed on the semiconductor wafer without dividing the dicing sheet, thereby dividing a plurality of semiconductor chips from each other. After aligning a contactor against the semiconductor wafer, the semiconductor wafer is fixed to the contactor. In this case, protrusions provided on the contactor are inserted into the gap between semiconductor chips. The protrusions cause a shift movement toward the peripheral edge of the contactor in response to thermal expansion of the contactor, thereby expanding the gap between semiconductor chips. Then a burn-in is performed on all of the plural semiconductor chips of which gap is expanded.

Inspecting method for semiconductor devices

A sound reproduction system suitable for automobile, the reproduction system having a band-pass filter, a phase-shifter for shifting the output of the band-pass filter and a mixer which mixes the output of the phase-shifter with the original audio signal at a suitable mixing ratio, whereby a low frequency standing wave which is generally produced in the small automobile room may be eliminated, thereby providing a desirable frequency response characteristic.

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Osaka, Japan

Shinichi Oki