Sumco Corporation

Dainippon Ink and Chemicals, Incorporated

Kirin Beer Kabushiki Kaisha

Nitta Haas Inc.

Sumico Corporation

Shinichi Ogata

Ryuichi Tanimoto

Keiichi Takanashi

Kazushige Takaishi

Shunsuke Mikuriya

Shigeru Okuuchi

Norio Endo

Takeo Katoh

Masashi Teramoto

Toshiyuki Kiyonari

Yuichi Nakayoshi

Toshihiko Yasui

Takeru Takushima

Hironori Nishimura

Yoshio Takimoto, Deceased

Katsuhilo Kawakami

Yasuharu Sawahara

Ichiro Yamasaki

Naoyuki Nagae

Takimoto Taheshi, Heirs

Tetsurou Taniguchi

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 &#x3bc;m/min can be achieved.

Polishing composition and polishing method using the same

In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate.

Method and apparatus for polishing workpiece

The method for polishing work, in which work in a retaining opening provided in a carrier plate, the center of the retaining opening being positioned apart from the center of the carrier plate, is sandwiched between an upper plate and a lower plate provided with polishing pads; the carrier plate is rotated by a drive mechanism; and the upper plate and the lower plate are also rotated, so that the distance changes periodically with the rotation of the carrier plate, and both surfaces of the work are simultaneously polished, includes the steps of: measuring at least one of torque of the drive mechanism, the upper plate, and the lower plate; and controlling an amount of polishing removal of the work based on the fluctuation of the torque component due to the periodic change in the distance.

Method and apparatus for polishing work

Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.

Method for polishing silicon wafer and polishing liquid therefor

An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished. The method is a wafer polishing method in which wafersare polished by supplying a polishing solution to surfacesof a pair of polishing padspositioned above and below carrierseach having a circular holefor retaining the wafers, the carriersbeing thinner than the wafers; and sliding the polishing padsrelatively to the carriers, thereby simultaneously polishing both surfaces of the wafersretained in the carriers. The method is characterized in that information sourced from the carrierswhen a difference between the thickness of the carriersand the thickness of the wafersreaches a predetermined value is detected to calculate the thickness of the wafers, thereby terminating polishing.

Wafer polishing method

Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.

Method for producing epitaxial silicon wafer

The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step.

Method for producing silicon epitaxial wafer

A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.

Method of polishing silicon wafer

The label printing apparatus has a structure including: a label feed means for successively feeding plural labels, each having an information printing area including a heat-sensitive color developing ink layer, to predetermined printing positions; a laser printing device which is provided with a sensor and a light source, said sensor serving to discriminate between presence and absence of the label in the predetermined printing position and to output a label detection signal, said light source serving to release a laser beam, and which receives the label detection signal directly from the sensor, prints information on the label by means of the laser beam when the presence of the label on the predetermined printing position is confirmed by the label detection signal, and outputs a shot signal; and a controller to discriminate whether the output interval between the shot signals is within a given period of time or not and to output an error signal when the output interval between the shot signals is not within the given period of time. Owing to the above-mentioned structure, the label printing apparatus of the present invention can be easily controlled, is free from any useless motion and is able to reduce occurrence of a defective.

Growing community of inventors

Tokyo, Japan

Shinichi Ogata