Applied Materials, Inc.

Applied Komatsu Technology, Inc.

Shinichi Kurita

John M White

Suhail Anwar

Robin L Tiner

Wendell T Blonigan

Soo Young Choi

Makoto Inagawa

Emanuel Beer

Benjamin M Johnston

Hung T Nguyen

Matthias Brunner

Gaku Furuta

Tae Kyung Won

Beom Soo Park

Takayuki Matsumoto

Ralf Schmid

Fayez E Abboud

Quanyuan Shang

Mehran Behdjat

Jae-Chull Lee

Chien-Teh Kao

Xiangxin Rui

Carl A Sorensen

David Eric Berkstresser

Qunhua Wang

Bassam Shamoun

Li Hou

Toshio Kiyotake

Janusz Jozwiak

Ki Woon Kim

Akihiro Hosokawa

Norman L Turner

Jozef Kudela

Lai Zhao

Sanjay D Yadav

Ke Ling Lee

Yoshiaki Tanase

James Craig Hunter

Sriram Krishnaswami

Paul Bocian

Edgar Kehrberg

Young Dong Lee

Jianhua Zhou

Dong-Kil Yim

Ernst Keller

Hongbin Ji

Yujia Zhai

Hans Georg Wolf

Billy C Leung

Ikuo Mori

Jeffrey A Kho

Inchen Huang

Eugene Mirro

Dennis Zvalo

Carl Sorenson

Srikanth V Racherla

Suhas Bhoski

Fayez (Frank) E Abboud

Fan Cheung Sze

Emanual Beer

Bora Oh

Kam S Law

Dieter Haas

Shouqian Shao

William Norman Sterling

Ilyoung R Hong

Donald Verplancken

Guangwei Sun

William T Lee

Robert B Conner

Beom Soo Kim

Rex Kusler

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Film stress control for plasma enhanced chemical vapor deposition

Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer containing zirconium dioxide or hafnium dioxide disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

Layer stack for display applications

Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

Method of removal of sharp corners from diffuser plate

Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.

Gas flow guide design for uniform flow distribution and efficient purge

The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.

Thin film encapsulation processing system and process kit

Embodiments described herein relate to a thermal chamber utilized in the processing of display substrates. The thermal chamber may be part of a larger processing system configured to manufacture OLED devices. The thermal chamber may be configured to heat and cool masks and/or substrates utilized in deposition processes in the processing system. The thermal chamber may include a chamber body defining a volume sized to receive one or more cassettes containing a plurality of masks and/or substrates. Heaters coupled to the chamber body within the volume may be configured to controllably heat masks and/or substrates prior to deposition processes and cool the masks and/or substrates after deposition processes.

Thin film encapsulation mask preheat and substrate buffer chamber

A PECVD chamber is disclosed with a temperature controlled gas distribution showerhead. The gas distribution showerhead is temperature controlled heated by circulating a g fluid through conduit formed within or coupled to the gas distribution showerhead. The PECVD chamber comprises a gas distribution showerhead, a backing plate coupled to the gas distribution showerhead, the backing plate having a bottom surface facing and substantially parallel with and spaced from an upper surface of the gas distribution showerhead; and a temperature controlling device coupled to the gas distribution showerhead and disposed between the backing plate and the gas distribution showerhead.

Diffuser temperature control

Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

Slit valve door with moving mating part

Implementations described herein generally relate to components and methods used in plasma processing, and more specifically relate to grooved surfaces for controlling RF return path lengths in plasma processing chambers and methods for forming the same. In one implementation, a backing plate for a plasma processing chamber is provided. The backing plate comprises a rectangular body. The rectangular body has a front surface, a back surface opposing the front surface, a first axis perpendicular to a center of the rectangular body and a plurality of grooves formed in the front surface. At least one groove of the plurality of grooves has a first length across the groove in a first location and a second length across the groove in a second location.

Grooved backing plate for standing wave compensation

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

Plasma uniformity control by gas diffuser hole design

The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.

Substrate support assembly with non-uniform gas flow clearance

Embodiments of the present invention provide a transfer robot having a cooling plate attached thereto for cooling a substrate during transfer between a processing chamber and a load lock chamber. In one embodiment, the cooling plate is a single, large area cooling plate attached to the transfer robot beneath the substrate being transferred. In another embodiment, the cooling plate is an array of substrates attached to the transfer robot beneath the substrate being transferred. The cooling plate may include a conduit path for circulating a cooling fluid throughout the cooling plate. The cooling plate may have an upper surface with a high emissivity coating applied thereto.

Transfer robot with substrate cooling

Growing community of inventors

San Jose, CA, United States of America

Shinichi Kurita