Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Shinichi Imai

Nobuhiro Jiwari

Tokuhiko Tamaki

Hideo Nakagawa

Kenshi Kanegae

Yuka Terai

Hideo Nikoh

Takumi Mikawa

Hiroshi Yamamoto

Yoshio Kawashima

Shinji Odanaka

Kousaku Yano

Hiroyuki Umimoto

Ichiro Nakao

Tadashi Kimura

Masanori Fukumoto

Satoshi Nakagawa

Yasuo Mizuno

Yasushi Naito

Toyokazu Fujii

Chiaki Kudo

Shoji Matsumoto

Takatoshi Yasui

Yoji Bito

Yoshimasa Inamoto

Naoaki Sato

Hideaki Okamura

Masaki Taguchi

Yoko Tohmori

Hideki Otsuka

Norishige Aoki

A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance layer including an oxygen-deficient transition metal oxide; forming an upper electrode layer on the variable resistance layer; and forming a patterned mask on the upper electrode layer and etching the upper electrode layer, the variable resistance layer, and the lower electrode layer using the patterned mask. In the etching, at least the variable resistance layer is etched using an etching gas containing bromine.

Nonvolatile storage element and method of manufacturing thereof

An organic/inorganic hybrid film represented by SiCHO(x&#x3e;0, y&#x2267;0, z&#x3e;0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.

Etching method, semiconductor and fabricating method for the same

In a method for fabricating a semiconductor device, interconnect grooves are formed in an insulating film on a substrate, and then a copper film is formed on the insulating film to fill the interconnect grooves. Subsequently, portions of the copper film existing outside the interconnect grooves are polished to form interconnects, and then a cleaning process is performed on the resulting substrate. Thereafter, moisture remaining around a portion of the insulating film exposed between the interconnects is removed in a vacuum.

Method for fabricating semiconductor device

The substrate processing apparatus relating to the present invention comprises a polishing section where wafers are sequentially arranged, and that has multiple polishing platens for polishing a metal film on the wafer surface in stages. The wafers are simultaneously conveyed between the polishing platens by a rotating head mechanism. Further, the wafers polished by the polishing platen for the final stage polishing are sequentially conveyed to a cleaning section and are cleaned. The wafers from the polishing section to the cleaning section are conveyed by a load-unload unit, a post-polishing wafer reversal unit and wet robots. Then, the operation of each part is controlled by an apparatus controller to start the cleaning processing of the polished wafers by the polishing platen for the final stage polishing within a predetermined time period from the completion of polishing by the polishing platen for the final stage polishing. With this control, corrosion to wiring containing corrodible metal, such as copper, can be assuredly prevented.

Substrate processing apparatus and substrate processing method

A method for manufacturing a semiconductor device is provided in which it is possible to perform process control taking account of wafer information and to deal with the process control in which a recipe is change from one wafer to another. The method comprises steps of inserting a process control system into the path of a network where a manufacturing execution system (MES) and a manufacturing apparatus are connected with each other by using a LAN, obtaining a process result on the lot of the wafers at a previous step through the use of the process control system to rewrite the process recipe, and transmitting the rewritten process recipe from the process control system to the manufacturing apparatus. Since the method includes the step of obtaining the process result on the lot effected at the previous step as wafer information, it is possible to calculate a control parameter taking account of the state of the wafers. Also, since a process control (APC) system is inserted between the MES and the apparatus, there is no communication between the MES and the APC system, so that a communication burden is reduced, thereby the process control can be performed from one wafer to another.

Method for manufacturing semiconductor device

A plurality of pieces of process data are acquired from a semiconductor production apparatus while it is in operation, and then, a multivariate analysis model is created using at least a portion of the plurality of pieces of process data.

System and method for monitoring semiconductor production apparatus

A semiconductor device of the present invention includes a semiconductor substrate including an active region and an isolating region provided so as to enclose the active region; a capacitance insulating film that is provided on the active region and is in contact with the isolating region; an upper electrode provided on the capacitance insulating film so as to be spaced away from the isolating region; an electrode pad provided on the isolating region; a lead conductive film provided over a part of the capacitance insulating film and a part of the isolating region for connecting the upper electrode and the electrode pad; and an interlayer insulating film provided over the substrate. Connection holes penetrating the interlayer insulating film to reach the electrode pad are formed, and the ratio (S/L) of the total sum (S) of exposed areas of the electrode pad in the contact holes with respect to the total sum (L) of lengths of the boundary line in an overlapping portion of the boundary line and the lead conductive films is adjusted such that the breakdown ratio of the capacitance insulating film is substantially zero, the boundary line being between the capacitance insulating film and the isolating region.

Semiconductor device and method for producing the same

A semiconductor device of the present invention includes a semiconductor substrate including an active region and an isolating region provided so as to enclose the active region; a capacitance insulating film that is provided on the active region and has a boundary portion in contact with the isolating region; an upper electrode provided on the capacitance insulating film so as to be spaced away from the isolating region; an electrode pad provided on the isolating region; a lead conductive film provided over a part of the capacitance insulating film and a part of the isolating region for connecting the upper electrode and the electrode pad; and an interlayer insulating film provided over the substrate. Connection holes penetrating the interlayer insulating film to reach the electrode pad are formed, and the ratio of the total sum of the exposed areas of the electrode pad in the contact holes with respect to the total sum of the widths of the lead conductive films in the boundary portion is a certain value or less.

A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing CF, CF, or CFas a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

Semiconductor device and method for fabricating the same

A method for manufacturing a semiconductor device of the present invention includes the steps of: (a) depositing an interlayer insulator film on a substrate including a plurality of conductive layers; (b) forming a plurality of contact holes running through the interlayer insulator film to reach respective ones of the plurality of conductive layers, each of the contact holes having a tapered portion at an upper end thereof; (c) depositing a conductive material film on the interlayer insulator film so as to fill the plurality of contact holes; (d) removing the conductive material film until a surface of the interlayer insulator film is exposed so as to form a plurality of plugs made of the conductive material film filling the plurality of contact holes; and (e) removing a portion of the interlayer insulator film, which has been exposed in the step (d), so as to remove the tapered portions.

Semiconductor device and method for manufacturing the same

A fluorine-containing organic film is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. The fluorine-containing organic film is then exposed to plasma of a rare gas in the same reactor chamber to densify the fluorine-containing organic film.

A semiconductor substrate, on which a silicon dioxide film with a resist film defined thereon has been formed, is placed inside a reaction chamber of a plasma processing system. Then, a fluorocarbon gas with a C/F ratio of 0.5 or more is introduced into the reaction chamber. In this process step, the flow rate of the gas is controlled such that the residence time &tgr; of the gas in the reaction chamber becomes greater than 0.1 sec and equal to or less than 1 sec in accordance with an equation &tgr;&equals;P&times;V/Q, where &tgr; is the residence time (unit: sec), P is a pressure (unit: Pa) of the gas, V is a volume (unit: L) of the reaction chamber and Q is the flow rate (unit: Pa&middot;L/sec) of the gas. Thereafter, plasma is created from the fluorocarbon gas and the silicon dioxide film is plasma-etched using the resist film as a mask.

Plasma processing method

A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.

Growing community of inventors

Osaka, Japan

Shinichi Imai