Tokyo Electron Limited

Shinichi Hatakeyama

Kousuke Yoshihara

Koji Takayanagi

Akihiro Teramoto

Naofumi Kishita

Yuichiro Kunugimoto

Kohei Kawakami

Naoki Shibata

Yuta Nishiyama

Takafumi Hasimoto

Yoshitomo Sato

Kazuyuki Tashiro

Shota Ueyama

Shinichiro Kawakami

Minoru Kubota

Kosuke Yoshihara

Hiroshi Mizunoura

Shogo Inaba

Hiroyuki Ide

Kentaro Yoshihara

Masanobu Watanabe

Seiya Totsuka

Kouzo Nishi

A substrate processing system includes: a measuring unit provided detachably with respect to a placement portion of a placement stage; a measuring jig for measuring a processing liquid; a liquid processing unit including a supplier which supplies the processing liquid to the measuring jig; a transfer mechanism for transferring the measuring jig between the measuring unit and the liquid processing unit; and a controller. The controller executes: a process of transferring the measuring jig in the measuring unit from the measuring unit to the liquid processing unit; a process of ejecting the processing liquid from the supplier to the measuring jig; a third process of transferring the measuring jig from the liquid processing unit to the measuring unit; and a fourth process of calculating an ejection amount of the processing liquid based on a measurement value in the measuring unit.

Liquid amount measuring method and computer-readable recording medium

Substrate processing system, liquid amount measuring method, computer-readable recording medium, and measuring jig

A method for coating a top of a substrate with a coating solution includes supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion. The method includes, then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.

Coating treatment method, computer storage medium and coating treatment apparatus

A substrate processing apparatus according to the present disclosure includes: a nozzle that ejects a processing liquid to a wafer; a force-feeding unit that force-feeds the processing liquid to the nozzle side; a liquid feeding pipeline that includes first and second valves and guides the processing liquid from the force-feeding unit to the nozzle; and a controller. The controller is configured to perform opening the first valve in a state where the second valve is closed and a pressure between the first and second valves is higher than a pressure between the force-feeding unit and the first valve, controlling the force-feeding unit to increase the pressure between the first and second valves that has been decreased by the opening of the first valve, and opening the second valve after the pressure between the first and second valves is decreased by the opening of the first valve.

Substrate processing method, substrate processing apparatus and storage medium

A coating and developing apparatusincludes a first protection processing unit U, a film forming unit U, a first cleaning processing unit Uand a control unit U. The control unit Uis configured to control the first protection processing unit Uto form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit Uto form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit Uto supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit Uto supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit Uto supply a third cleaning liquid for removing the first protective film PFto the peripheral portion Wc.

Substrate processing apparatus, substrate processing method and recording medium

There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t-t); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t-t). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t-t).

Coating method, computer storage medium and coating apparatus

A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.

Coating treatment method with airflow control, and non-transitory recording medium having program recorded thereon for executing coating treatment with airflow control

There are provided a liquid processing method, a liquid processing apparatus and a recording medium for liquid processing which can enhance the uniformity of the coating state of a processing liquid on a substrate. A coating unit includes a rotary holder for rotating a wafer, a nozzle for supplying a processing liquid onto a surface of the wafer, and a controller for controlling the position of the nozzle with respect to the wafer. A liquid processing method includes: starting the supply of the processing liquid to the surface of the wafer at an eccentric position at a distance from the center of rotation of the wafer, and moving the position on the wafer to which the processing liquid is supplied toward the center of rotation of the wafer while rotating the wafer at a first rotational speed; and, after the processing liquid supply position has reached the center of rotation of the wafer, rotating the wafer at a second rotational speed which is higher than the first rotational speed, thereby allowing the processing liquid to spread toward the periphery of the wafer.

Liquid processing method, liquid processing apparatus and recording medium

Coating and development treatment system with airflow control including control unit and movable airflow control plate

There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. Further, in the scan-out process, the coating liquid nozzle is moved at a speed lower than a speed at which the coating liquid is moved to a side of an edge of the substrate.

Periphery coating apparatus, periphery coating method and storage medium therefor

A periphery coating unit performs a scan-in process of moving a resist liquid nozzlefrom an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzleand a scan-out process of moving the resist liquid nozzlefrom the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzleFurther, in the scan-out process, the resist liquid nozzleis moved at a speed vlower than a speed vat which the resist liquid is moved to a side of the edge Wb of the wafer W.

A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less.

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Koshi, Japan

Shinichi Hatakeyama