Renesas Technology Corp.

Renesas Electronics Corporation

Shingo Yorisaki

Akio Hasebe

Yasuhiro Motoyama

Masayoshi Okamoto

Hideyuki Matsumoto

Yasunori Narizuka

Akira Shimase

Naoki Okamoto

Akira Yabushita

Ryuji Shibata

Yoshiaki Hasegawa

Toshiyuki Majima

A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet.

Manufacturing method of semiconductor integrated circuit device

To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.

Fabrication method of semiconductor integrated circuit device

As the thickness of the card holder for preventing warping of a multilayered wiring substrateis increased, there occurs a problem that a thin film sheetis buried in a card holder and secure contact between probesand test pads cannot be realized. For its prevention, the thin film sheetand a bonding ringare bonded in a state where a tensile force is applied only to the central region IA of the thin film sheet, and a tensile force is not applied to an outer peripheral region OA. Then, the height of the bonding ringdefining the height up to the probe surface of the thin film sheetis increased, thereby increasing the height up to the probe surface of the thin film sheet

Electrical testing is to be performed on a semiconductor integrated circuit device which the test pads formed. To facilitate such testing, the method of manufacture of the semiconductor integrated circuit device employs a probe card which has two or more contact terminals which can contact two or more electrodes. This probe card includes, in opposition to a wiring substrate of the semiconductor integrated circuit device in which a first wiring is formed, a first sheet having two or more contact terminals to contact the two or more electrodes; a second wiring electrically connected to the two or more contact terminals and the first wiring; and first dummy wirings which are near the region of formation of the two or more contact terminals, are arranged to a non-forming region of the second wiring, and do not participate in signal transfer.

Manufacturing method of semiconductor integrated circuit device and probe card

During probe testing using a prober having probe needles formed by using a manufacturing technology for a semiconductor integrated circuit device, reliable contact is ensured between the probe needles and test pads. A pressing tool having at least one hole portion formed therein and extending therethrough between the main and back surface thereof is prepared. An elastomer in the form of a sheet and a polyimide sheet are successively disposed on the main surface of the pressing tool. With th elastomer and the polyimide sheet being electrostatically attracted to the pressing tool, the pressing tool is disposed on a thin-film sheet such that the main surface thereof faces the back surface (the surface opposite to the main surface thereof formed with the probe) of the thin-film sheet. Then, the thin-film sheet with the pressing tool bonded thereto is attached to a probe card.

Growing community of inventors

Tokyo, Japan

Shingo Yorisaki