Sanyo Electric Co., Ltd.

Shingo Terakado

Masaaki Nemoto

Masaru Yamano

Masao Nakao

Takashi Goto

Ryohkan Yuasa

Atsuo Mizukami

Osamu Kitamura

Hiromi Mukaida

Kazuaki Shikiti

A stencil mask for use in a photochemical reaction process includes a path extending between the rear and front surfaces thereof. The path is used with a window for passing photons so as to supply a reactive medium and discharge an exhaust medium containing reaction products. Further, the path also serves as a space for separating an object from a pattern on a mask substrate. The path has a depth which is smaller than a minimum value attained by a semiconductor manufacturing process.

Stencil mask

A dry etching method capable of performing fine patterning. A sample substrate is fixedly disposed on a table in a reactant chamber. Gas plasma produced by a gas plasma generator is introduced into the reactant chamber, and excitation light, that is, light capable of exciting inner shell electrons of constituent atoms of the substrate, is irradiated onto the substrate from above the substrate. In the optical path of the excitation light is disposed a mask. The substrate is irradiated with the light in response to a pattern designated by the mask. The excitation light has an energy for exciting electrons of constituent atoms of the substrate. Upon arrival of the light in etched regions, the electrons of the substrate are excited. As a result, etching is effected by the contact of the excited electrons with the gas plasma, and the rate of this etching is greatly enhanced. Since the electrons of the substrate in masked areas are not excited, the masked areas become hardly subjected to etching by the contact of the gas plasma, whereby the pattern of the mask is transferred to the substrate with high accuracy, whereby fine patterns are formed.

Dry etching method

A dry etching method for etching a substrate such as semiconductors. A vacuum ultraviolet radiation or soft X-rays is used as a photon beam source for generating a reaction of dry etching, and also an etching gas in introduced into a reaction chamber after being activated by a microwave radiation, whereby a reaction of the etching gas with a substrate takes place at a region of the processing material to which the electromagnetic wave is irradiated, and a dry etching is accomplished at the region etched by the reaction of the etching gas.

The present invention relates to a superconducting material that is, substances having compositions expressed by empirical formulae Y.sub.1-x Ba.sub.x CuO.sub.3, YBa.sub.2 Cu.sub.3 O.sub.7 and LnBa.sub.2 Cu.sub.3 O.sub.7 and critical temperatures of 90 K. or more, and to a method of producing the same in which for example Y.sub.2 O.sub.3, BaCO.sub.3 and CuO are blended at a mixture molar ratio of 1:2:6 and the resulting mixture is molded under pressure followed by slowly cooling in an oxidizing atmosphere.

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Tsukuba, Japan

Shingo Terakado