L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Hitachi-kokusai Electric Inc.

Shingo Okubo

Kazutaka Yanagita

Julien Gatineau

Yoshiro Hirose

Norikazu Mizuno

Jean-Marc Girard

Kohei Tarutani

Changhee Ko

Toshiyuki Nakagawa

Terumasa Koura

Naoto Noda

Ikuo Suzuki

Ivan Oshchepkov

Kazuma Suzuki

Koji Ishida

Mikio Goto

Koji Matsumoto

Supply system include a first vessel containing the precursor, a second vessel, a first gas conduit fluidically connecting the first vessel to the second vessel, wherein a pressure reduction device and a flow control device are fluidically mounted therein, a second gas conduit fluidically connecting the second vessel to a point of use, and a pressure gauge downstream the pressure reduction device for measuring a partial pressure of the precursor in the second vessel, wherein the partial pressure of the precursor in the second vessel is at a pressure lower than the saturated vapor pressure of the precursor at the temperature of the second vessel and higher than an inlet pressure requirement of the flow control device at the point of use. Methods for using the supply system are also disclosed.

Supply system for low volatility precursors

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Vapor deposition of silicon-containing films using penta-substituted disilanes

A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si&#x2014;C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.

Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100&#xb0; C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Metal heterocyclic compounds for deposition of thin films

Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide metal thin film layer is deposited onto the substrate.

Metal piperidinate and metal pyridinate precursors for thin film deposition

Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100&#xb0; C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Growing community of inventors

Tsukuba, Japan

Shingo Okubo