Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Dai-ichi Kogyo Seiyaku Co., Ltd.

Shingo Komatsu

Seiichi Nakatani

Yasuhiro Sugaya

Toshiyuki Asahi

Yoshihisa Yamashita

Koichi Hirano

Yoshiyuki Yamamoto

Toshiyuki Kojima

Takashi Kitae

Seiji Karashima

Takashi Ichiryu

Yasuyuki Matsuoka

Satoru Yuhaku

Kazuo Ohtani

Tetsuyoshi Ogura

Hideki Iwaki

Yasuteru Saito

Yutaka Kumano

Naoki Ike

The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of &#x2014;C(COOH)&#x2550;C(COOH)&#x2014;, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.

Field-effect transistor and method for manufacturing the same

There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. This flip-chip mounting resin composition comprises a resin, metal particles and a convection additivethat boils upon heating the resin. Upon the heating of the resin, the metal particles melt and the boiling convection additiveconvects within the resin. This flip-chip mounting resin composition is supplied between a circuit substrateand a semiconductor chip, and subsequently the resinis heated so that the molten metal particles self-assemble into the region between each electrode of the circuit substrate and each electrode of the semiconductor chip. As a result, an electrical connection is formed between each electrode of the circuit substrate and each electrode of the semiconductor chip. Finally, the resinis allowed to cure so that the semiconductor chipis secured to the circuit substrate, which leads to in a formation of a flip chip assembly.

Flip-chip mounting resin composition and bump forming resin composition

A method for fabricating a flexible semiconductor device includes: preparing a layered filmincluding a first metal layer, an inorganic insulating layer, a semiconductor layer, and a second metal layerwhich are sequentially formed; etching the first metal layerto form a gate electrode; compression bonding a resin layerto a surface of the layered filmprovided with the gate electrodeto allow the gate electrodeto be embedded in the resin layer; and etching the second metal layerto form a source electrodeand a drain electrode, wherein the inorganic insulating layeron the gate electrodefunctions as a gate insulating film, and the semiconductor layerbetween the source electrodeand drain electrodeon the inorganic insulating layerfunctions as a channel

Method for making a semiconductor device on a flexible substrate

A pair of discretionary points on a principal surface of a block are coupled to each other with a metal wire having a length larger than a distance between the pair of discretionary points, liquid resin is applied to the principal surface so as to cover the metal wire and then cured, so that a resin-cured material is formed, and the upper-surface portion of the resin-cured material is removed together with an intermediate portion of the metal wire, and then the block is removed from the resin-cured material.

Semiconductor device and manufacturing process thereof

A mounted body () of the present invention includes: a semiconductor element () having a surface () on which element electrodes () are formed and a rear surface () opposing the surface (); and a mounting board () on which wiring patterns () each having an electrode terminal () are formed. The rear surface () of the semiconductor element () is in contact with the mounting board (), and the element electrodes () of the semiconductor element () are connected electrically to the electrode terminals () of the wiring pattern () formed on the mounting board () via solder connectors () formed of solder particles assembled into a bridge shape. With this configuration, fine pitch connection between the element electrodes of the semiconductor element and the electrode terminals of the mounting board becomes possible.

Mounted body and method for manufacturing the same

A layered film of a three-layer clad foil formed with a first metal layer, a second metal layer, and an inorganic insulating layerinterposed therebetween is prepared. After the second metal layeris partially etched to form a gate electrode, the first metal layeris partially etched to form source/drain electrodesin a region corresponding to the gate electrode. A semiconductor layeris then formed in contact with the source/drain electrodesand on the gate electrodewith the inorganic insulating layerinterposed therebetween. The inorganic insulating layeron the gate electrodefunctions as a gate insulating film, and the semiconductor layerbetween the source/drain electrodeson the inorganic insulating layerfunctions as a channel.

Manufacturing method of flexible semiconductor device and flexible semiconductor device

An electronic component mounting method includes a step of applying a resin composition () including solder powder, convective additive and resin having fluidity at the melting temperature of the solder powder on a main surface of a wiring substrate () provided with conductive wirings and connecting terminals, a step of preparing a group of electronic components consisting of a plurality of electronic components (and) including at least a passive component, the respective electronic components comprising electrode terminals, position-aligning connecting terminals with the electrode terminals, and making the group of electronic components abut a surface of the resin composition, a step of heating at least the resin composition so as to melt solder powder and make the solder powder self-assembled between the connecting terminals and the electrode terminals by the convective additive, and thereby connecting the connecting terminals and the electrode terminals by soldering, and a step of fixedly adhering the group of electronic components to the wiring substrate using the resin by hardening the resin in the resin composition. Accordingly, a mounting process can be remarkably simplified without forming bumps in advance.

Electronic component mounting method

A mounted body of the present invention includes: a multilayer semiconductor chipincluding a plurality of semiconductor chips() that are stacked; and a mounting boardon which the multilayer semiconductor chipis mounted. In this mounted body, each of the semiconductor chips() in the multilayer semiconductor chiphas a plurality of element electrodes() on a chip surface() facing toward the mounting board. On the mounting board, electrode terminalsare formed so as to correspond to the plurality of element electrodes (), respectively, and the electrode terminalsof the mounting board and the element electrodes () are connected electrically to each other via solder bump formed as a result of assembly of solder particles. With this configuration, a mounted body on which a stacked package is mounted can be manufactured easily.

A transfer material capable of transferring a fine wiring pattern to a substrate reliably and easily. The transfer material includes at least three layers of a first metal layer as a carrier, a second metal layer that is transferred to the substrate as a wiring pattern, and a peel layer adhering the first and second metal layers releasably. On the surface portion of the first metal layer, a concave and convex portion corresponding to the wiring pattern is formed, and the peel layer and the second metal layer are formed on a region of the convex portions.

Transfer material used for producing a wiring substrate

A method for forming solder bumps for realizing high density mounting and a highly reliable method for mounting a semiconductor device is provided. A flat plate having a plurality of projections or recesses thereon is prepared; the flat plate is aligned to oppose an electronic component and a resin composition including a solder powder is supplied to a gap between the flat plate and the electronic component; the resin composition is annealed to melt the solder powder included in the resin composition for growing the solder powder up to the level of the surface of the flat plate by allowing the melted solder powder to self-assemble on terminals, so as to form solder bumps on the terminals; and the flat plate is removed after cooling and solidifying the solder bumps. Thus, the solder bumps having pits corresponding to the projections or having protrusions corresponding to the recesses are formed.

Method for forming solder bump and method for mounting semiconductor device using a solder powder resin composition

A semiconductor device () of the present invention includes a semiconductor element () including electrode parts (), and a wiring substrate () including an insulation layer (), electrode-part-connection electrodes () provided in the insulation layer (), and external electrodes () that is provided in the insulation layer () and that is connected electrically with the electrode-part-connection electrodes (), in which the electrode parts () and the electrode-part-connection electrodes () are connected electrically with each other. The insulation layer () has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes () and the electrode-part-connection electrodes () are connected by metal joint.

Semiconductor device and method for manufacturing the same

A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.

Component built-in module and method for producing the same

A component built-in module including a core layer formed of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns, which are formed on at least one surface of the core layer. The electric insulating material of the core layer is formed of a mixture including at least an inorganic filler and a thermosetting resin. At least one or more of active components and/or passive components are contained in an internal portion of the core layer. The core layer has a plurality of wiring patterns and a plurality of inner vias formed of a conductive resin. The electric insulating material formed of the mixture including at least an inorganic filler and a thermosetting resin of the core layer has a modulus of elasticity at room temperature in the range from 0.6 GPa to 10 GPa. Thus, it is possible to provide a thermal conductive component built-in module capable of filling the inorganic filler with high density; burying the active component such as a semiconductor etc. and the passive component such as a chip resistor, a chip capacitor, etc. in the internal portion of the substrate; and simply producing a multilayer wiring structure.

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Osaka, Japan

Shingo Komatsu