National Yang Ming Chiao Tung University

Lite-on Technology Corporation

Shing-Chung Wang

Hao-Chung Kuo

Tien-Chang Lu

Ching-Hua Chiu

Hung-Wen Huang

Chih-Ming Lai

Huei-Min Huang

Shih-Wei Chen

A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.

Semiconductor optical device having an air media layer and the method for forming the air media layer thereof

A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nand disposed on the substrate; a light emitting layered structure with a refractive index n, where n&#x3e;n, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength &#x3bb;; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/&#x3bb;, ranging from 0.25 to 0.70.

Surface-emitting laser device

A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Light-emitting device and method for making the same

Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.

Growing community of inventors

Hsinchu, Taiwan

Shing-Chung Wang