Macronix International Co., Ltd.

Shing-Ann Luo

Chin-Ta Su

Kuang-Chao Chen

Tuung Luoh

Ta-Hung Yang

Chi-Pin Lu

Sheng-Hui Hsieh

Chien-Hung Lu

An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.

Method of forming a deposited material by utilizing a multi-step deposition/etch/deposition (D/E/D) process

Method of depositing a silicon-containing material by utilizing a multi-step fill-in process in a deposition machine

Multivariate monitoring method for plasma process machine

An HDP-CVD process is described, including a deposition step conducted in an HDP-CVD chamber and a pre-heating step that is performed outside of the HDP-CVD chamber before the deposition step and pre-heats a wafer to a temperature higher than room temperature and required in the HDP-CVD process deposition step.

HDP-CVD process, filling-in process utilizing HDP-CVD, and HDP-CVD system

A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer.

Non-volatile memory cell

Fabricating method of non-volatile memory cell

A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of the DARC. Furthermore, the proportion of the silicon-containing gas to the oxygen or the proportion of the silicon-containing gas to the nitrogen-containing gas is increased to control the k value of the DARC. By means of proper control of the n value and the k value, the DARC can have the lowest substrate reflectivity.

Method for controlling the properties of DARC and manufacturing DARC

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Hsinchu, Taiwan

Shing-Ann Luo