Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Shin Okamoto

Koichiro Inazawa

Kimihiro Higuchi

Hiromasa Mochiki

Toshihiko Shindo

Koichi Yatsuda

Kouichiro Inazawa

Fumio Yamazaki

Takashi Nishijima

Yoshihide Kihara

Hisataka Hayashi

Masahiro Ogasawara

Noriyuki Kobayashi

Yoshifumi Tahara

Akinori Kitamura

Yoshinobu Ooya

Akitoshi Harada

Takaya Matsushita

Atsutoshi Inokuchi

Tomoki Suemasa

Kazuya Kato

Hideki Mizuno

Kelvin Kyaw Zin

Katsuhiko Ono

Shunichi Iimuro

Yasushi Inata

Kohei Mizota

Tetsuya Nishiara

Maki Koizumi

Sachiko Furuya

An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

Plasma processing apparatus

An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Etching processing method

A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

Plasma etching apparatus, plasma etching method and storage medium

A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.

Plasma processing method and plasma processing apparatus

A method of treating a dielectric layer on a substrate is described. The method comprises forming the dielectric layer on the substrate, wherein the dielectric layer comprises a dielectric constant value less than the dielectric constant of SiO. A feature pattern is formed in the dielectric layer using an etching process. Following the etching process, the feature pattern is treated using a nitrogen-containing plasma in order to form nitride surface layers by introducing nitrogen to the exposed surfaces of the dielectric layer in the feature pattern. Thereafter, the feature pattern is selectively etched to partially or fully remove the nitride surface layers.

Method for treating a dielectric film to reduce damage

In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard mask in order to prevent shoulder sag. By adopting this method, a dual damascene structure in which the extent of the shoulder sag at the hard mask is minimized can be achieved through etching.

Method of etching dual damascene structure

A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

Plasma etching method

This semiconductor device includes a substrateto be processed, a first insulation filmarranged at a designated position on the substrateto have a via-hole, an organic filmformed on the first insulation filmand a second insulation filmformed on the organic film. Both of the organic filmand the second insulation filmhave a trenchin communication with the via-hole, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic filmon the substrateto be processed, forming a film having a designated pattern on the organic filmwhile exposing a part of the organic film, and removing the exposed part of the organic filmfrom the substrateto expose a foundation layer of the organic film

Semiconductor device and manufacturing method thereof

Contact holes ( ) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film ( ) down to a wiring layer ( ) at a deep position and a wiring layer ( ) at a shallow position, respectively, which are embedded in the insulating film ( ). A process gas containing C F , CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C F gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film ( ) is etched with the plasma to form the contact holes ( ).

An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH F gas and O gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH F /O ) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.

An etching method comprising the steps of forming an etched layer on a wafer and covering the etched layer with an anti-reflection cover and then the anti-reflection cover with a photoresist film, pattern-exposing the photoresist film, developing the exposed photoresist film to form pattern openings in each of which the anti-reflection cover is exposed, and carrying the wafer into a chamber, exhausting the chamber to decompressed atmosphere, and introducing a mixed gas of C.sub.4 F.sub.8 gas and at least one of O.sub.2 and N.sub.2 gases into the process chamber to generate plasma of this mixed gas and act active species in this plasma on the wafer, whereby the anti-reflection cover which is exposed in each of the pattern openings is etched and the etched layer is then etched without etching the photoresist film formed on an inner surface each pattern opening.

Method of etching a substrate

An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.

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Nirasaki, Japan

Shin Okamoto