Osaka University

Sharp Kabushiki Kaisha Corporation

National Cheng-kung University

Yamato Scientific Co., Ltd.

Shijo Nagao

Katsuaki Suganuma

Akio Shimoyama

Hiroya Sato

Seiichiro Kihara

Jinting Jiu

Tomotoshi Satoh

Shih-Kang Lin

Aiji Suetake

Kazutaka Takeshita

Shinya Seki

Chulmin Oh

Dongjin Kim

Naoki Wakasugi

Wakasugi Naoki

A substrate evaluation chip is used to perform a test for evaluating a thermal characteristic of a mounting substrate that is mountable a power semiconductor. The substrate evaluation chip includes an insulating substrate bonded with the mounting substrate, and a heating pattern that is formed on a surface of the insulating substrate by a metallic film and is arranged by having a predetermined shape that is optimized to beat the insulating substrate more uniformly. The insulating substrate is a substrate in which an insulating film is formed on a surface of a single crystal substrate having a thermal conductivity of 250 [W/mK] or more.

Substrate evaluation chip and substrate evaluation device

A bonding material () of the present invention includes an amorphous silver film ().

Bonding material, method for producing bonding material, and method for producing bonding structure

A bonding device () bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device () includes a wall section (), at least one pressing section (), and a rotational shaft (). The rotational shaft () is fixed to the wall section (). Each pressing section () has an arm () and a presser () or a substrate supporting member (). The arm () extends from the rotational shaft (). The arm () pivots about the rotational shaft (). The presser () presses the component (C). The substrate supporting member () is disposed on a reference surface (). The substrate supporting member () supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser () with the component (C) or point contact of the substrate supporting member () with the reference surface ().

Bonding device

Provided is an electrode like a protruding electrode that is self-standing on a substrate. A conductive paste () contains a conductive powder, an alcoholic liquid component, and no adhesives. The conductive powder contains conductive particles having a thickness of 0.05 &#x3bc;m or more and 0.1 &#x3bc;m or less and a representative length of 5 &#x3bc;m or more and 10 &#x3bc;m or less, the representative length being a maximum diameter in a plane perpendicular to the direction of the thickness. The weight percentage of the alcoholic liquid component relative to the conductive paste is 8% or more and 20% or less.

Conductive paste having dilatancy, electrode connection structure including the paste, and method for producing the structure

A bonding structure () of the present invention includes a substrate (), a metal film (), a semiconductor element (). The substrate (), the metal film (), and the semiconductor element () are laminated in order just mentioned. The metal film () contains a metal diffused through stress migration, and the substrate () and the semiconductor element () are bonded together with the metal film () therebetween.

Bonding structure and method for producing bonding structure

Growing community of inventors

Suita, Japan

Shijo Nagao