Hermes-epitek Corporation

Shih-Yung Shieh

Tsan-Hua Huang

Noboru Suda

Takahiro Oishi

Junji Komeno

A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Vapor phase film deposition apparatus

A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.

Gas injector for semiconductor processes and film deposition apparatus

A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.

Growing community of inventors

Hsinchu, Taiwan

Shih-Yung Shieh