Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Yu Tu

Li-Jui Chen

Heng-Hsin Liu

Po-Chung Cheng

Han-Lung Chang

Hsiao-Lun Chang

Shang-Chieh Chien

Shao-Hua Wang

Chieh Hsieh

Ming-Hsun Tsai

Hsin-Feng Chen

Wei-Shin Cheng

Chueh-Chi Kuo

Cheng-Hao Lai

Yu-Kuang Sun

Yen-Hao Liu

Cheng-Hsuan Wu

Yu-Fa Lo

Jou-Hsuan Lu

Sheng-Kang Yu

Yen-Hsun Chen

A coating is included on one or more components of a lithography system. The coating reduces surface roughness of the one or more surfaces, increases flatness of the one or more surfaces, and/or increases uniformity of the one or more surfaces. The coating may be formed on the one or more surfaces using one or more of the techniques described herein. The coating is configured to reduce adhesion of target material particles to the one or more surfaces, is configured to resist buildup of target material particles on the one or more surfaces, is configured to provide resistance against oxidation of the one or more surfaces, is configured to resist thermal damage of the one or more surfaces, and/or is configured to enable the lithography system to operate at higher operating temperatures, among other examples.

Semiconductor processing tool and methods of operation

Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

EUV photolithography system fuel source and methods of operating the same

In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Method of cleaning wafer table of photolithography system and method of manufacturing integrated circuit

An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

System and method for detecting debris in a photolithography system

A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

Replacement and refill method for droplet generator

Highly efficient automatic particle cleaner method for EUV systems

A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

Droplet catcher, droplet catcher system of EUV lithography apparatus, and maintenance method of the EUV lithography apparatus

A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150&#xb0; C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150&#xb0; C.; and assembling a second droplet generator to the vessel.

Replacement method for droplet generator

A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.

Droplet generator assembly and method for using the same and radiation source apparatus

Droplet catcher system of EUV lithography apparatus and EUV lithography apparatus maintenance method

A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150&#xb0; C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150&#xb0; C.

Growing community of inventors

Hsinchu County, Taiwan

Shih-Yu Tu