Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Wei Bih

Yen-Yu Chen

Wei-Jen Chen

Wei Zhang

Chang-Sheng Lee

Chia-Hsi Wang

Wei-Chen Liao

Yi-Chih Chen

Hsien-Chieh Hsiao

A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

PVD target design and semiconductor devices formed using the same

A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 &#x3bc;m.

Process kit of physical vapor deposition chamber and fabricating method thereof

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Taichung, Taiwan

Shih-Wei Bih