Phoenix Precision Technology Corporation

Phoenix Pioneer Technology Co., Ltd.

Unimicron Technology Corporation

Zhen Ding Technology Co., Ltd.

Phoenix LLC

Hongqisheng Precision Electronics (qinhuangdao) Co., Ltd.

Qi Ding Technology Qinhuangdao Co., Ltd.

Phoenix Precision Technology Corproation

Shih-Ping Hsu

Che-Wei Hsu

Chu-Chin Hu

Pao-Hung Chou

Chun-Hsien Yu

Chao-Wen Shih

Kan-Jung Chia

Hsien-Shou Wang

Chih-Kuai Yang

Kun-Chen Tsai

Chin-Ming Liu

Bo-Wei Chen

Shang-Wei Chen

Ying-Tung Wang

Sao-Hsia Tang

Chien-Chih Chen

Wen-Hung Hu

Zhao-Chong Zeng

E-Tung Chou

I-Chung Tung

Chao-Tsung Tseng

Chao-Chung Tseng

Tung-Yao Kuo

Chung-Cheng Lien

I-Ta Tsai

Shing-Ru Wang

Yen-Hung Liu

Chao Wen Shih

Shu-Wei Hu

Suo-Hsia Tang

Chin-Wen Liu

Chiang-Du Chen

Hong-Xia Shi

Tang-I Wu

Chia-Wei Chang

Lin-Yin Wong

Han-Kun Hsieh

Hsien-Ming Tsai

Chih-Jen Hsiao

Ching-Chieh Chang

Yi-Ju Chen

Chi-Feng Peng

Wen Hung Hu

Meng-Da Chou

Chih-Wen Liu

Yi-San Wang

Jiun-Shian Yu

Kuo-Bin Chen

Chin-Yao Hsu

Wen-Chang Chen

Micallaef Ivan

The invention discloses a semiconductor package antenna structure and its manufacturing method, wherein the semiconductor package antenna structure includes a first substrate, a semiconductor chip, and a second substrate. The first substrate has at least two stacked first redistribution layers, and each of the first redistribution layers has a first dielectric layer, a first patterned metal layer, and/or a first conductive pillar layer. The semiconductor chip is embedded in the first substrate and coupled to the first redistribution layers. The second substrate has a second redistribution layer, a second conductive pillar layer, and an air dielectric layer, wherein the second conductive pillar layer is protruded from the second redistribution layer. The second substrate is connected to the first substrate by a second conductive pillar layer, and the air dielectric layer is located between the second redistribution layer, the second conductive pillar layer, and the first substrate.

Semiconductor package antenna structure and its manufacturing method

A flip-chip packaging substrate and a method for fabricating the same are disclosed. The method includes stacking a plurality of insulating layers having conductive posts in a manner that the conductive posts are stacked on and in contact with one another. The insulating layers and the conductive posts serve as a core layer structure of the flip-chip packaging substrate. As such, the conductive posts having small-sized end surfaces can be fabricated according to the practical need. Therefore, when the thickness of the core layer structure is increased, the present disclosure not only increases the rigidity of the flip-chip packaging substrate so as to avoid warping, but also ensures the design flexibility of the small-sized end surfaces of the conductive posts, allowing high-density electrical connection points and fine-pitch and high-density circuit layers to be fabricated on the core layer structure.

Method of fabricating a flip-chip package core substrate with build-up layers

An inductance structure is provided and includes a plurality of inductance traces embedded in an insulating body and at least one shielding layer that is embedded in the insulating body and free from being electrically connected to the inductance traces. The shielding layer has a plurality of line segments that are free from being connected to one another. The shielding layer shields the inductance traces to improve the inductance value and quality factor.

Inductance traces protected through shielding layers

An inductor structure is provided. A plurality of first and second conductive posts have end surfaces corresponding in profile to ends of first conductive sheets, respectively. As such, the profiles of the end surfaces of the first and second conductive posts are non-cylindrical so as to increase the contact area between the first conductive sheets and the first and second conductive posts, thereby improving the conductive quality and performance of the inductor. Further, since the first and second conductive posts are formed by stacking a plurality of post bodies on one another, the number and cross-sectional area of loops are increased so as to increase the inductance value. A method for fabricating the inductor structure, an electronic package and a fabrication method thereof, and a method for fabricating a packaging carrier are further provided.

Inductor structure having conductive sheets having fan plate shape arranged in ring structure and fabrication method thereof, electronic package and fabrication method thereof, and method for fabricating packaging carrier

A surface acoustic wave (SAW) filter package structure includes a dielectric substrate having a dielectric layer, a first patterned conductive layer, a second patterned conductive layer, and a conductive connection layer. The conductive connection layer is electrically connected between the first patterned conductive layer and the second patterned conductive layer, which are disposed at opposite sides of the dielectric layer. The second patterned conductive layer has a finger electrode portion. An active surface of a chip is faced toward the finger electrode portion. A polymer sealing frame is disposed between the chip and the dielectric substrate and surrounds the periphery of the chip to form a chamber together with the chip and the dielectric substrate. The mold sealing layer is disposed on the dielectric substrate and covers the chip and the polymer sealing frame. A manufacturing method of the SAW filter package structure is also disclosed.

Manufacturing method for surface acoustic wave filter package structure

A semiconductor package device includes a flexible carrier, a first chip, a second chip, a first molding layer, a first adhesive layer and a second molding layer. The flexible carrier has a flexible layer and a rigid layer. The flexible layer has a patterned build-up circuit. The rigid layer is connected to a portion surface of the flexible layer. The position that the flexible layer connected to the rigid layer is formed a first carrying part and a second carrying part. The region of the flexible layer between the first carrying part and the second carrying part without the rigid layer is formed as a first flexible part. The first chip is connected to the first carrying part by flip-chip manner and the second chip is connected to the second carrying part by flip-chip manner. The first molding layer covers the first chip and the second molding layer covers the second chip. The first adhesive layer is connected between the first molding layer and the second carrying part.

Semiconductor package device

An intermediate substrate is provided with a plurality of conductive posts and support members arranged at opposite sides of a coreless circuit structure and insulating layers encapsulating the conductive posts and the support members. Through the arrangement of the support members and the insulating layers, the intermediate substrate can meet the rigidity requirement so as to effectively resist warping and achieve an application of fine-pitch circuits.

Intermediate substrate and fabrication method thereof

A semiconductor package structure includes a chip, a conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with at least a first metal electrode pad and a second side with at least a second metal electrode pad. The conductive pillar, which has a first end and a second end, is disposed adjacent to the chip. The axis direction of the conductive pillar is parallel to the height direction of the chip. The dielectric layer covers the chip and the conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric layer and electrically connected between the first metal electrode pad and the first end of the conductive pillar.

Semiconductor package structure and method of making the same

A flip-chip package substrate is provided. A strengthening structure is provided on one side of a circuit structure to increase the rigidity of the flip-chip package substrate. When the flip-chip package substrate is used in large-scale packaging, the flip-chip package substrate can have good rigidity, so that the electronic package can be prevented from warping.

Flip-chip package substrate

Flip-chip packaging substrate and method for fabricating the same

A semiconductor package substrate, a method for fabricating the same, and an electronic package having the same are provided. The method includes: providing a circuit structure having a first solder pad and a second solder pad; forming on the circuit structure a metal sheet having a first hole, from which the first solder pad is exposed, and a second hole, from which the second solder pad is exposed; and forming an insulation layer on the metal sheet and a hole wall of the second hole. A first conductive element that is to be grounded is disposed in the first hole and is in contact with the metal sheet and the first solder pad. Therefore, heat generated in a signal transmission process is dissipated by the metal sheet and the first conductive element.

Semiconductor package substrate having heat dissipating metal sheet on solder pads, method for fabricating the same, and electronic package having the same

A semiconductor package is provided and includes: an insulative layer having opposing first and second surfaces; a wiring layer embedded in the insulative layer and having a first side that is exposed from the first surface of the insulative layer and a second side opposing the first side and attached to the second surface of the insulative layer; at least one electronic component mounted on the second side of the wiring layer and electrically connected to the wiring layer; and an encapsulating layer formed on the second side of the wiring layer and the second surface of the insulative layer and encapsulating the electronic component. Therefore, the single wiring layer is allowed to be connected to the electronic component on one side and connected to solder balls on the other side thereof to shorten the signal transmission path.

Package structure

A semiconductor package carrier board, a method for fabricating the same, and an electronic package having the same are provided. The method includes forming on a circuit structure a graphene layer that acts as an insulation heat dissipating layer. Since the heat conductivity of the graphene layer is far greater than the heat conductivity of ink (about 0.4 W/m&#xb7;k), which is used as solder resist, the heat of the semiconductor package carrier board can be conducted quickly, and thus can avoid the problem that the heat will be accumulated on the semiconductor package carrier board.

Semiconductor package carrier board, method for fabricating the same, and electronic package having the same

Surface acoustic wave filter package structure and method of manufacturing the same

A semiconductor packaging substrate and a method for fabricating the same are provided. The method includes forming a solder resist structure having a hole on a circuit structure, with a portion of the circuit structure exposed from the hole, and forming a cup-shaped solder stand on the exposed circuit layer and a hole wall of the hole. During a packaging process, the design of the solder stand increases a contact area of a solder tin ball with a metal material. Therefore, a bonding force between the solder tin ball and the solder stand is increased, and the solder tin ball can be protected from being broken or fell off. An electronic package having the semiconductor packaging substrate and a method for fabricating the electronic package are also provided.

Semiconductor package substrate, electronic package and methods for fabricating the same

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Hsin-Chu, Taiwan

Shih-Ping Hsu