United Microelectronics Corp.

Shih-Ming Yen

Te-Hung Wu

Chuen-Huei Yang

Chung-An Chen

Chih-Hao Wu

Ju-Te Chen

Wen-Tsung Wu

Chi-Ching Huang

A prediction model for exposure dose is indicated by the following formula, E=E+E, wherein E represents an optimized exposure dose, Erepresents a preset exposure dose of a process control system, and Erepresents an exposure dose compensation value, and=[()/()]&#xd7;(')&#xd7;(),wherein MTTrepresents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDrepresents the actual critical dimension of the mask, X represents the magnification of the mask, Erepresents the actual exposure dose of a previous lot, A&#x2032; represents an experimental value obtained from the results of different lots, Wrepresents the last batch of weights and Wrepresents an average weight, and CD, E, A&#x2032;, Wand Ware set parameters built into the process control system.

Prediction model and prediction method for exposure dose

A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

Method of inspecting photomask defect

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Kaohsiung, Taiwan

Shih-Ming Yen