Siliconware Precision Industries Co., Ltd.

Shih-Kuang Chiu

Hsin-Yi Liao

Meng-Tsung Lee

Hong-Da Chang

Chiang-Cheng Chang

Jung-Pang Huang

Ying-Chou Tsai

Yi-Che Lai

Chi-Hsin Chiu

Chun-An Huang

Chien-Ping Huang

Han-Ping Pu

Cheng-Hsu Hsiao

Chun-Chi Ke

Fu-Tang Huang

Lu-Yi Chen

Yan-Heng Chen

Chang-Yueh Chan

Mao-Hua Yeh

Wen-Tsung Tseng

Guang-Hwa Ma

Chao-Dung Suo

Kuo-Liang Mao

Chien-An Chen

Chen-Han Lin

Ke-Chuan Yang

Han-PIng Pu

Feng-Lung Chien

Ying Chou Tsai

Cheng-Hsiang Liu

Chih-Shun Chen

Po-Hao Yuan

Keng-Yuan Liao

Wen-Sen Tang

Hsu-Hsi Chang

Kun-Sheng Chien

An interposer is provided which includes: a substrate having a first surface with a plurality of first conductive pads and a second surface opposite to the first surface, the second surface having a plurality of second conductive pads; a plurality of conductive through holes penetrating the first and second surfaces of the substrate and electrically connecting the first and second conductive pads; and a first removable electrical connection structure formed on the first surface and electrically connecting a portion of the first conductive pads so as to facilitate electrical testing of the interposer.

Electrical testing method of interposer

A package structure is provided, which includes: a frame having a cavity penetrating therethrough; a semiconductor chip received in the cavity of the frame, wherein the semiconductor chip has opposite active and inactive surfaces exposed from the cavity of the frame; a dielectric layer formed in the cavity to contact and fix in position the semiconductor chip, wherein a surface of the dielectric layer is flush with a first surface of the frame toward which the active surface of the semiconductor chip faces; and a circuit structure formed on the surface of the dielectric layer flush with the first surface of the frame and electrically connected to the active surface of the semiconductor chip, thereby saving the fabrication cost and reducing the thickness of the package structure.

Method for fabricating package structure

Package structure and fabrication method thereof

A fabrication method of a semiconductor package includes the steps of: forming a release layer on a carrier having concave portions; disposing chips on the release layer in the concave portions of the carrier; forming an encapsulant on the chips and the release layer; forming a bonding layer on the encapsulant; removing the release layer and the carrier so as to expose the active surfaces of the chips; and forming a circuit structure on the encapsulant and the chips. Since the release layer is only slightly adhesive to the chips and the encapsulant, the present invention avoids warpage of the overall structure during a thermal cycle caused by incompatible CTEs.

Fabrication method of wafer level packaging semiconductor package with sandwich structure of support plate isolation layer and bonding layer

Interposer and electrical testing method thereof

A fabrication method of a semiconductor package includes the steps of: providing a carrier having a concave portion and a releasing layer formed on a surface thereof; disposing a chip on the releasing layer in the concave portion; forming an encapsulant on the chip and the releasing layer; removing the releasing layer and the carrier; and forming a circuit structure on the encapsulant and the chip. The design of the concave portion facilitates alignment of the chip to prevent it from displacement, thereby improving the product reliability. A semiconductor package fabricated by the fabrication method is also provided.

Carrier, semiconductor package and fabrication method thereof

A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurrence of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

Semiconductor package and method of fabricating the same

A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield.

Semiconductor device having conductive vias

A method of fabricating a semiconductor package is provided, including: disposing a plurality of semiconductor elements on a carrier through an adhesive layer in a manner that a portion of the carrier is exposed from the adhesive layer; forming an encapsulant to encapsulate the semiconductor elements; removing the adhesive layer and the carrier to expose the semiconductor elements; and forming a build-up structure on the semiconductor elements. Since the adhesive layer is divided into a plurality of separated portions that will not affect each other due to expansion or contraction when temperature changes, the present invention prevents positional deviations of the semiconductor elements during a molding process, thereby increasing the alignment accuracy.

Method of fabricating semiconductor package having semiconductor element

A semiconductor package and a method for fabricating the semiconductor package are provided. The semiconductor package includes a base layer, a plurality of conductive pillars, a semiconductor element, and an encapsulation. The base layer has opposing first and second surfaces and a receiving part. The conductive pillars are formed on the second surface. Each of the conductive pillars has first and second terminals, and the second terminal is distant from the second surface of the base layer. The semiconductor element is received in the receiving part, and has opposing active and passive surfaces, and the active surface is exposed from the first surface. The encapsulation is formed on the second surface, encapsulates the conductive pillars and the semiconductor element, and has opposing third and fourth surfaces, and the second terminals of the conductive pillars are exposed from the fourth surface. The semiconductor package is provided with the conductive pillars having fine pitches.

Semiconductor package having conductive pillars

A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

A fabrication method of a semiconductor package is disclosed, which includes the steps of: providing a semiconductor structure having a carrier, a circuit portion formed on the carrier and a plurality of semiconductor elements disposed on the circuit portion; disposing a lamination member on the semiconductor elements; forming an insulating layer on the circuit portion for encapsulating the semiconductor elements; and removing the carrier. The lamination member increases the strength between adjacent semiconductor elements so as to overcome the conventional cracking problem caused by a CTE mismatch between the semiconductor elements and the insulating layer when the carrier is removed.

Semiconductor package and fabrication method thereof

A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Fabrication method of wafer level package having a pressure sensor

A package structure is provided, which includes: a wafer having a surface with a groove, a thin film closing an open end of the groove and electrical contacts; a chip having a surface with a conductive layer and an opposite surface with a concave portion and a seal ring located at a periphery of the concave portion, the chip being disposed on the wafer with the seal ring surrounding the thin film and the electrical contacts located outside the seal ring; an encapsulant formed on the wafer for encapsulating the chip and the electrical contacts; a plurality of sub-conductive wires embedded in the encapsulant with one ends exposed from a top surface of the encapsulant and the other ends in electrical connection with the electrical contacts; and a through hole penetrating the wafer and communicating with the concave portion, thereby reducing the fabrication cost and size of the package structure.

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Taichung, Taiwan

Shih-Kuang Chiu