United Semiconductor (Xiamen) Co., Ltd.

Shih-Feng Su

Wen Yi Tan

Chih-Chien Huang

Ji He Huang

William Zheng

The invention provides a semiconductor cleaning step, which comprises the following steps: providing a chamber with a bottom surface and a sidewall, the chamber contains a heater on the bottom surface, performing a first deposition step to leave a residual layer on the sidewall of the chamber, performing a carbon deposition step to form a carbon layer on at least the surface of the heater, and performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface.

Growing community of inventors

Kaohsiung City, Taiwan

Shih-Feng Su