Applied Materials, Inc.

Shih Chung Chen

Srinivas Gandikota

Yixiong Yang

Wei V Tang

Lin Dong

Yongjing Lin

Seshadri Ganguli

Karla M Bernal Ramos

Naomi Yoshida

Steven C H Hung

Xinliang Lu

Jacqueline S Wrench

Atif Noori

Mei Yin Chang

Paul F Ma

Jeffrey W Anthis

Maitreyee Mahajani

Liqi Wu

Luping Li

Yu Lei

Sang Ho Yu

Wenyu Zhang

Chi-Chou Lin

Jing Zhou

David P Thompson

Siddarth A Krishnan

Dien-Yeh Wu

Mandyam Sriram

Xinyu Fu

Wen Xiao Chen

Gill Yong Lee

Sung-Kwan Kang

Yong Wu

Faruk Gungor

Steven C Hung

Ilanit Fisher

Chenfei Shen

Kedi Wu

Michael Patrick Chudzik

Muhammad M Rasheed

Rongjun Wang

He Ren

Susmit Singha Roy

Zhebo Chen

Kazuya Daito

Balasubramanian Ramachandran

Yi Xu

Lei Zhou

Atashi Basu

Rajesh Sathiyanarayanan

Sang-Ho Yu

Kevin A Papke

Xinming Zhang

In Seok Hwang

Leung Kway Lee

Chen Han Lin

Wei Tang

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Liner for V-NAND word line stack

Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

Method of reducing titanium nitride etching during tungsten film formation

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Fluorine-free tungsten ALD for dielectric selectivity improvement

Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

P-type dipole for P-FET

Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

Integrated dipole flow for transistor

Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

Methods for reflector film growth

Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-&#x3ba; dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

P-type dipole for p-FET

Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

Reducing gate induced drain leakage in DRAM wordline

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an &#x3b1;-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-&#x3ba; dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.

Fluorine-doped nitride films for improved high-k reliability

Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

Method of reducing effective oxide thickness in a semiconductor structure

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Cupertino, CA, United States of America

Shih Chung Chen