Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Che Huang

Chih-Hsien Hsu

Yu-Pei Chiang

Jr-Sheng Chen

Chun Yan Chen

Zhi-Hao Huang

An-Chi Li

Ming Chih Wang

Alex Wang

Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

Devices and methods for controlling wafer uniformity in plasma-based process

Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

Baffle plate for controlling wafer uniformity and methods for making the same

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Zhubei, Taiwan

Shih-Che Huang