Hitachi Chemical Company, Ltd.

Shigeru Yoshikawa

Munehiro Oota

Takashi Shinoda

Takaaki Tanaka

Toshio Takizawa

Takahiro Yoshikawa

Shigeru Nobe

Kazuhiro Enomoto

Masayuki Hanano

Eiichi Satou

Takaaki Matsumoto

One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2&#x3b8;=27.000 to 29.980&#xb0; in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36&#xb0;, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 &#x3bc;m or greater is 5000&#xd7;10/mL or less.

Polishing liquid for CMP, polishing liquid set for CMP, and polishing method

Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of &#x2014;COOM group, -Ph-OM group, &#x2014;SOM group and &#x2014;POMgroup, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

Polishing liquid and method for polishing substrate using the polishing liquid

The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer.

Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same

The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Polishing solution for CMP and polishing method using the polishing solution

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Hitachi, Japan

Shigeru Yoshikawa