Tokyo Electron Limited

Université D'orleans

Kabushiki Kaisha Toshiba

Imec

Tokyo Electron Limi Ted

Shigeru Tahara

Eiichi Nishimura

Akira Koshiishi

Jacques Faguet

Kaoru Maekawa

Masaru Sugimoto

Noriyuki Kobayashi

Masaru Nishino

Shigeru Yoneda

Philippe Lefaucheux

Gaëlle Antoun

Kenichi Hanawa

Remi Dussart

Thomas Tillocher

Hiroshi Tomita

Boon Teik Chan

Hisashi Okuchi

Mitsuhiro Omura

Tokuhisa Ohiwa

Ryuichi Asako

Mikhail Rodionovich Baklanov

Takahiko Kato

Gousuke Shiraishi

Jean-Francois De Marneffe

Naotsugu Hoshi

Kumiko Ono

Nagisa Sato

Liping Zhang

Jun Tamura

Reiko Sasahara

Nobuaki Seki

Kenji Matsumoto

Toru Ishii

Jun Sato

Hidenori Miyoshi

Mingmei Wang

Koichi Yatsuda

Hiroki Maehara

Fumiko Yamashita

Takanori Matsumoto

Kunihiko Hinata

Jun Ooyabu

Du Zhang

Hideaki Tanaka

David Hurley

Yuki Chiba

Kiyoshi Maeda

Mitsuru Hashimoto

Morihiro Takanashi

Daisuke Urayama

Hojin Kim

Doni Parnell

Kumiko Yamazaki

Seiichi Takayama

Masahiro Yamazaki

Ken Ando

An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

Etching method and etching apparatus

A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

Selective etching with fluorine, oxygen and noble gas containing plasmas

A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.

Method for etching oxide semiconductor film and plasma processing apparatus

An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

Etching method

A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.

A plasma processing apparatus of an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generator. The chamber body provides an inner space thereof as a chamber. The stage is provided in the chamber. In the stage, a flow channel for a refrigerant is formed. The gas supply system is configured to supply a first gas causing capillary condensation thereof in a porous film and a second gas for etching a porous film to the chamber. The plasma generator is configured to generate plasma of a gas supplied to the chamber. The gas supply system provides a first flow passage connecting a source of the second gas to the chamber, a second flow passage connecting a source of the first gas to the first flow passage, and a third flow passage connecting a gas discharging apparatus to the second flow passage.

Plasma processing apparatus, processing system, and method of etching porous film

A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Plasma etching method

A plasma etching apparatus includes a second electrode configured to support a target substrate thereon, a second RF power supply unit configured to apply a second RF power for providing a bias for ion attraction to the second electrode, and a control system including and an RF controller. The RF controller is configured to switch the second RF power supply unit between a continuous mode that executes continuous supply of the second RF power at a constant power level and a power modulation mode that executes modulation of the second RF power between a first power and a second power larger than the first power. The RF controller is preset to control the second RF power supply unit such that the second RF power supply unit is first operated in the continuous mode for plasma ignition and then is switched into the power modulation mode.

Plasma etching apparatus and method

A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing containerof a plasma processing apparatusin which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container, and a third step of generating a plasma of a third gas in the processing container. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

Method for etching copper layer

There is provided a method of processing a target object to be processed including a porous film and a mask. The method include supplying a first gas into a processing chamber of a plasma processing apparatus in which the target object including the porous film is accommodated, and generating a plasma of a second gas in the processing chamber to remove the mask. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the target object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas supplied into the processing chamber is greater than or equal to 20% of the saturated vapor pressure.

Method of processing target object to be processed

A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.

Method and system for performing post-etch annealing of a workpiece

A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.

Method of etching porous film

A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

A method of an embodiment includes: mounting a workpiece, which includes the magnetic layer, on an electrostatic chuck provided in a processing container of a plasma processing apparatus; and etching the magnetic layer to generate plasma of a processing gas including isopropyl alcohol and carbon dioxide in the processing container. In an embodiment, a pressure of a space in the processing container is set to be 1.333 Pa or less, a temperature of the electrostatic chuck is set to be &#x2212;15&#xb0; C. or lower, and a partial pressure of isopropyl alcohol is set to be equal to or lower than a saturation vapor pressure of the isopropyl alcohol.

Method for etching magnetic layer including isopropyl alcohol and carbon dioxide

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Miyagi, Japan

Shigeru Tahara