Tokyo Electron Limited

Shigeru Senzaki

Nobuyuki Nagayama

Kouji Mitsuhashi

Tadashi Aoto

Toshiki Sasaki

Tomoyuki Takahashi

Hiroshi Tsujimoto

Katsuyuki Koizumi

Michishige Saito

Dai Kitagawa

Takanori Banse

Nobutaka Sasaki

Daiki Satoh

Toshikatsu Tobana

Shingo Koiwa

Keigo Toyoda

Shunichi Mikami

Hirofumi Haga

Ken Horiuchi

Hiraku Murakami

Nobutaka Nakao

Koji Ando

Akinori Miyata

A plasma processing apparatus includes: a processing container; a processing gas supply unit; a mounting table configured to mount a to-be-processed substrate thereon; an upper electrode provided above the mounting table; a plasma generation unit configured to supply a high frequency power to generate plasma of the processing gas; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; a conductive rectification plate configured to adjust a flow of the processing gas discharged to outside of the processing container; a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode. A distance of the conductor in the height direction in relation to the to-be-processed surface of the substrate is set to be within a predetermined range.

Plasma processing apparatus

There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.

Temperature control mechanism, temperature control method and substrate processing apparatus

A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Dechuck control method and plasma processing apparatus

Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

Plasma processing method

A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.

Substrate processing apparatus and maintenance method thereof

A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unitstructuring a ceiling portion of a processing chamberof an etching deviceis structured from a lower assemblyat a processing chamberside including an upper electrodeand an upper assemblyat a power supply side including an electro-bodyA lock mechanismis released, and after the upper assemblyis independently raised and removed by a lift mechanismmaintenance of the upper assemblyand/or the lower assemblyis carried out. The lock mechanismis locked, and after the upper and lower assembliesare integrally raised and removed by the lift mechanismmaintenance of an interior of the processing chamberis carried out.

Processing device and method of maintaining the device, mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism

A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unitstructuring a ceiling portion of a processing chamberof an etching deviceis structured from a lower assemblyat a processing chamberside including an upper electrode, and an upper assemblyat a power supply side including an electro-body. A lock mechanismis released, and after the upper assemblyis independently raised and removed by a lift mechanism, maintenance of the upper assemblyand/or the lower assemblyis carried out. The lock mechanismis locked, and after the upper and lower assembliesare integrally raised and removed by the lift mechanism, maintenance of an interior of the processing chamberis carried out.

Processing device and method of maintaining the device, mechanism and method for assembling processing device part, and lock mechanism and method for locking the lock mechanism

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Miyagi, Japan

Shigeru Senzaki