Fuji Photo Film Company, Limited

Canon Kabushiki Kaisha

Shin-etsu Chemical Co., Ltd.

Freund Industrial Co., Ltd.

Other

Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Displays, Ltd.

Nippon Electric Co., Ltd.

Shigeru Ohno

Keishi Saitoh

Yukihiko Ohnuki

Shunichi Ishihara

Masahiro Kanai

Isamu Shimizu

Shunri Oda

Ichiro Endo

Keiichi Adachi

Shinzo Kishimoto

Yasushi Sato

Seiji Saito

Takashi Nakagiri

Shigeru Shirai

Koki Nakamura

Tetsuro Kojima

Hideo Ikeda

Naoyasu Deguchi

Takashi Yunogami

Sukeyoshi Tsunekawa

Miwako Nakahara

Toshiyuki Arai

Fujio Sekigawa

Yuji Mihara

Naonori Makino

Satoshi Hoshi

Sumito Yamada

Katsuji Kitatani

Hideo Miyazaki

Kazuto Watanabe

Morio Yagihara

Yasushi Hattori

Kiyoshi Kawai

Shimesu Motoyama

Nobuaki Miyasaka

Noboru Hoshi

Koichi Suematsu

Tadashi Ito

Yoshiharu Yabuki

Yoshio Inagaki

Hideo Sato

Toru Harada

Akira Abe

Minoru Sakai

Keiichi Suzuki

Koji Wariishi

Tomokazu Yasuda

Masaaki Hirooka

Tetsuo Nakamura

Narimichi Takei

Masahiro Okada

Kokichi Waki

Hajime Kobayashi

Eiichi Kato

Junichiro Kanbe

Kazuo Ishii

Kozo Sato

Toshinobu Ishihara

Nobuo Seto

Toshiyuki Komatsu

Hiroshi Ito

Yoshitaka Nakamura

Masaru Izawa

Hisashi Okamura

Noboru Koumura

Nobuaki Inoue

Ichizo Toya

Yasuo Mukunoki

Kunio Ishigaki

Yoshihiro Jimbo

Yukio Miyaki

Toshinao Ukai

Kazuo Nojiri

Kenji Sano

Akihiko Ikegawa

Yoshisada Nakamura

Nobuo Sakai

Toshiro Takahashi

Fumio Kawamoto

Tetsuo Yoshida

Keizo Koya

Keishi Kato

Kensuke Goda

Shigeki Shimizu

Shigeaki Ohtani

Masayuki Ikeda

Ryosuke Itakura

Koichi Kuno

Kunihiko Watanabe

Tsuyoshi Uchida

Shigetaro Ogura

Yasuko Gotoh

Shigeru Yamazaki

Seiichi Umeda

Shigeru Kuwashima

Gouichi Hayashi

Takashi Usami

Yasuhito Momoki

Katsugi Kitatani

Kaoru Kurita

An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.

Display device

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Process for treating solid surface and substrate surface

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

Manufacturing method of semiconductor integrated circuit device

A silver halide photographic material comprises a support, at least one silver halide emulsion layer and at least one non-light-sensitive hydrophilic colloidal layer. The silver halide emulsion layer or the hydrophilic colloidal layer contains a colorant having the absorption maximum wavelength within the infrared region of 700 to 1,100 nm. The colorant is in the form of solid particles dispersed in the silver halide emulsion layer or in the hydrophilic colloidal layer. The solid particles cannot substantially be removed by a processing solution of the silver halide photographic material. An image forming process employing the silver halide photographic material is also disclosed.

Silver halide photographic material containing infrared absorbing

Bubble jet recording is performed using a recording head with an orifice for projecting liquid. A liquid path with a plurality of electrothermal transducers is in fluid communication with the orifice. The transducers are selectively driven to change the amount of liquid ejected from the orifice.

Bubble jet recording with selectively driven electrothermal transducers

The pyrazolone-pentamethine oxonol compound represented by the formula (Ib): ##STR1## in which A.sup.3 is methyl, ethyl or sulfoethyl; each of Q.sub.6 and Q.sub.7 independently is hydrogen, methyl, ethyl or sulfoethyl; M.sup.5 is sodium or potassium; and M.sup.6 is hydrogen, sodium or potassium.

Silver halide photographic material containing pyrazolone-pentamethine

A silver halide photographic material is disclosed, which comprises a support having thereon at least one silver halide emulsion layer, wherein the support is polyester having a glass transition temperature of from 90.degree. C. to 200.degree. C. and contains a specific dye and/or an inorganic pigment in a slight amount.

Silver halide photographic material

A silver halide photographic material comprising at least one silver halide emulsion layer and at least one non-light-sensitive hydrophilic colloidal layer provided on a support. The silver halide emulsion layer or the hydrophilic colloidal layer contains a dye represented by the formula (I): ##STR1## in which A.sup.1 is an alkyl group, a substituted alkyl group, an aryl group or a substituted aryl group; each of Q.sup.1 and Q.sup.2 is hydrogen, an alkyl group or a substituted alkyl group, or Q.sup.1 and Q.sup.2 are combined with each other to form a five or six-membered heterocyclic ring; Q.sup.3 is hydrogen, a halogen atom, carboxyl, hydroxyl, methyl or methoxy; each of M.sup.1 and M.sup.2 is hydrogen, a metal atom or an atomic group that forms a monovalent cation; and p is 2, 3 or 4.

Disclosed is a silver halide photographic material containing particular cyanine dye polymer(s) comprising at least one repeating unit represented by formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, or a chlorine atom; L.sup.1 represents --CON(R.sup.2)-- (where R.sup.2 represents a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, or a substituted alkyl group having from 1 to 6 carbon atoms), --COO--, --NHCO--, --OCO--, --C.sub.6 H.sub.2 (R.sup.3)(R.sup.4)COO-- (where R.sup.3 and R.sup.4 each independently represent a hydrogen atom, a hydroxyl group, a halogen atom, or a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted acyloxy group or a substituted or unsubstituted aryloxy group; and C.sub.6 H.sub.2 represents a benzene ring with four substituents), or --C.sub.6 H.sub.2 (R.sup.3)(R.sup.4)CON(R.sup.2)-- (where R.sup.2, R.sup.3, R.sup.4 and C.sub.6 H.sub.2 have the same meanings as above); L.sup.2 represents a linking group by which L.sup.1 and D are bonded to each other; k and j each represent 0 or 1; p represents 1 or 2; and D represents a cyanine dye residue. The material is successfully detected by an infrared sensor provided in a processing system, while being processed rapidly, and the processed material is free from residual color.

There is provided an improved light receiving member comrpsing a substrate and a light receiving layer formed by laminating a first layer having photoconductivity which is constituted with an amorphous material containing silicon atoms as the main constituent atoms and germanium atoms, and a second layer constituted with an amorphous material containing silicon atoms, carbon atoms and an element for controlling the conductivity. The germanium atoms contained in the first layer are in the state of being unevenly distributed in the entire layer region or in the partial layer region adjacent to the substrate. The first layer may contain one or more kinds selected from an element for controlling the conductivity, oxygen atoms and nitrogen atoms in the entire layer region on in the partial layer region.

Electrophotographic layered light receiving member containing A-Si and Ge

Process for electrophotographic imaging with layered light receiving

Growing community of inventors

Yokohama, Japan

Shigeru Ohno