Shin-etsu Handotai Co., Ltd.

Shigeru Oba

Kazuaki Aoki

Hiromasa Hashimoto

Yoshihiro Usami

Shiro Amagai

An edge portion measuring apparatus for measuring shape of an edge portion of a wafer, including, a holding portion that holds the wafer, a rotating means for rotating the wafer, a sensor including a light projecting portion for projecting a laser light from a light source onto the edge portion of the wafer held by the holding portion, and a light receiving detection unit receiving diffuse reflected light that the laser light projected is reflected at the edge portion of the wafer, wherein, rotating the wafer while holding the wafer, at least in a range from normal direction of a held surface of the wafer to normal direction of a surface opposite to the held surface, projecting the laser light and detecting the diffuse reflected light by the sensor, being able to measure the shape of an entire area of the edge portion of the wafer by a triangulation method.

Edge portion measuring apparatus and method for measuring edge portion

A sizing device in a polishing apparatus for measuring a thickness of a wafer in course of polishing by laser beam interference, includes: a light-source for irradiating the wafer in course of polishing with a laser beam, a light-receiving portion for receiving reflected light from the wafer in course of polishing irradiated with the laser beam from the light-source, a calculating part for calculating a measured value of the thickness of the wafer in course of polishing irradiated with the laser beam based on the reflected light received through the light-receiving portion. The calculating part can calculate the wafer thickness in course of polishing by calculating a measuring error value of the wafer thickness in course of polishing from resistivity of the wafer in course of polishing based on a previously determined correlation between wafer resistivity and measuring error value of wafer thickness, and by compensating the measuring error value.

Sizing device, polishing apparatus, and polishing method

A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.

Method for producing mirror-polished wafer

The present invention is directed to a double-side polishing method including interposing a wafer held by a carrier between upper and lower turn tables to which respective polishing pads are attached, and rotating and revolving the carrier while supplying a polishing agent to polish both surfaces of the wafer at the same time, the method including the steps of: first polishing at a high polishing rate; second polishing at a low polishing rate; measuring flatness of the polished wafer; and determining polishing conditions of the second polishing in a next polishing batch on a basis of the measured flatness. The method can stably improve the flatness of a wafer without being affected by variations in carrier thickness over time.

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Nishigo-mura, Japan

Shigeru Oba