Anelva Corporation

Canon Anelva Corporation

M. Setek Co., Ltd.

Shigeru Mizuno

Nobuyuki Takahashi

Masahito Ishihara

Manabu Tagami

Takanori Yoshimura

Sunil Wickramanayaka

Yoshihiro Katsumata

Naoki Miyazaki

Yoichiro Numasawa

Kazuhito Watanabe

Shinya Hasegawa

Hajime Sahase

Hideki Satou

Makoto Satou

Hiroshi Doi

Tsutomu Tsukada

Nobuaki Tsuchiya

Hisaaki Sato

Isamu Morisako

Tsuyoshi Murai

Toshinori Konaka

Kiyoshi Nashimoto

Nobuyoki Takahashi

Shigeaki Nakamura

Seiji Itani

Xiao-Meng Liu

Akihiko Koura

An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

Electrostatic chuck device

A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate. A bias systemcauses the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrodewhich is in a dielectric block. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control sectionin a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

Thin film fabrication method and thin film fabrication apparatus

CVD apparatus

A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate . A bias system causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode which is in a dielectric block . The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

A plasma processing apparatus includes a cathode,having a large diameter part,and a long thin small diameter part,, and the upper end surface of the large diameter part,faces the plasma forming space,. The substrate,which is to be processed is mounted on the upper end surface of the large diameter part,. The lower end of the small diameter part,is connected via the matching circuit,to the high frequency power source,. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part,, the first side wall,and the insulator,. The radial line includes the lower surface of the large diameter part,, the upper surface of the bottom plate,and the gap,between them. The small diameter coaxial line includes the small diameter part,, the second side wall,and the gap,. Appropriate impedance matching is achieved between the two coaxial lines and the radial line.

Plasma processing apparatus

The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.

Substrate processing apparatus

A deposition apparatus has a reactor 11 which is furnished with a reaction gas delivery part 13 and a substrate holder 12 in which reaction gas is delivered from the reaction gas delivery part to a substrate 23 on the substrate holder, and a thin film is deposited on the substrate by means of a chemical reaction which results from supplying HF power to the reaction gas delivery part. Plasma is generated and excites the reaction gas. The gas delivery parts 27, 29, 30, 31 produce a flow of purge gas in the dead space surrounding the reaction gas deliver part. Reaction gas which is liable to be retained in the dead space is driven out by the flow of this gas, and circulation and retention of reaction gas are prevented.

Chemical vapor deposition apparatus

A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.

A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.

Method of processing a substrate and apparatus for the method

A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.

Method of depositing thin films by plasma-enhanced chemical vapor

An electrode unit of a thermal CVD apparatus is used to generate plasma discharge for an in-situ cleaning process. The electrode unit is configured by a substrate holder and a shield member connected to a high frequency power supply, the gas supply section electrically grounded, and an auxiliary electrode disposed in the gas supply section. In a film deposition process, a reactive gas is supplied from the gas supply section, and the reactive gas is excited in a space in front of a substrate to deposit a thin film onto the substrate. In a periodical in-situ cleaning process, a cleaning gas is supplied from the gas supply section and a cleaning discharge is generated to remove unwanted films deposited on the substrate holder and the shield member. The auxiliary electrode causes the cleaning discharge to be concentrated in a space around unwanted films.

Growing community of inventors

Kawasaki, Japan

Shigeru Mizuno