Fujitsu Corporation

Shigeru Maruyama

Hiroshi Yasuda

Keiichi Betsui

Yoshihisa Oae

Kenichi Miyazawa

Tomohiko Abe

Junichi Kai

Takamasa Satoh

Soichiro Arai

Hideki Nasuno

Shunsuke Fueki

Takashi Kiuchi

Hironobu Kitajima

Yoshihisa Ooaeh

Horonobu Kitajima

A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

Charged particle beam exposure system and method

A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.1) as large as, a corresponding resolution of the first bitmap data, respectively in X- and Y-directions; dividing the second bitmap data into cells each having a size of 2n bits in the X-direction and 2m bits in said Y-direction; and creating the first bitmap data from the second bitmap data by selecting four data bits from each of the cells, such that a selection of the data bits is made in each of the cells with a regularity in the X- and Y-directions and such that the number of rows in the X-direction and the number of columns in the Y-direction are both equal to 3 or more.

Method and system for exposing an exposure pattern on an object by a

A charged particle beam exposure method including steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

Charged particle beam exposure system

A transmission mask for a charged particle beam exposure apparatus that includes a mask substrate having a plurality of apertures arrange in a matrix and a pair of deflection electrodes at each aperture on one surface of the mask substrate. A beam shield layer having a reflectivity to the charged particle beam greater than the mask substrate is positioned on the other surface of the mask substrate. The transmission mask is installed in the apparatus so that the beam shield layer is oriented towards the charged particle beam to prevent an increase in temperature due to irradiation of the charged particle beam.

Transmission mask for charged particle beam exposure apparatuses, and an

A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

A system for aligning a mask and a semiconductor wafer comprises radiation source for producing a radiation beam, a dual focus linear Fresnel zone plate provided on the mask for focusing the radiation beam incident thereto on a surface of the semiconductor wafer which comprises a first part having a first focal length and a second part having a second focal length substantially smaller than the first focal length, a diffraction grating provided on the surface of the semiconductor wafer in correspondence to the dual focus linear Fresnel zone plate for diffracting the radiation beam focused thereon, a detector held with a predetermined relationship with respect to the radiation source and the mask for detecting the diffracted beam, a movable stage for supporting the semiconductor wafer, and a controller for moving the stage means responsive to an output signal of the detection means.

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Kawasaki, Japan

Shigeru Maruyama