Shin-etsu Chemical Co., Ltd.

Shigeru Konishi

Yoshihiro Kubota

Makoto Kawai

Toshio Ohba

Shoji Akiyama

Nobuo Kawada

Mitsuhito Takahashi

Hiroki Yoshikawa

Toru Shirasaki

Shinji Makikawa

Masatoshi Ishii

Shozo Shirai

Shouhei Kozakai

Hiroshi Mogi

Kazutoshi Nagata

Seiki Ejima

Masatoshi Asano

Norifumi Takahashi

Hiroshi Matsukawa

A highly thermal conductive substrate formed by bonding a device layer formed on a silicon on insulator (SOI) wafer and a buried oxide film to an insulator substrate having a thermal conductivity of 40 W/m·K or more via a low-stress adhesive, wherein a thickness of the buried oxide film is 50 to 500 nm and a thickness of the adhesive is 0.1 to 10 μm.

Method of transferring device layer to transfer substrate and highly thermal conductive substrate

Provided are a device substrate with high thermal conductivity, with high heat dissipation, and with a small loss at high frequencies, and a method of manufacturing the device substrate. A device substrateof the present invention can be manufactured by: provisionally bonding a Si device layer side of an SOI device substrateto a support substrateusing a provisional bonding adhesive, the SOI device substrate including a Si base substrate, a buried layerformed on the Si base substrate, having high thermal conductivity, and being an electrical insulator, and a Si device layerformed on the buried layer; removing the Si base substrateof the provisionally bonded SOI device substrate until the buried layer is exposed, thereby obtaining a thinned device wafer; transfer-bonding the buried layer side of the thinned device wafer and a transfer substrateto each other using a transfer adhesivehaving a heat-resistant temperature of at least 150&#xb0; C. by applying heat and pressure, the transfer substrate having high thermal conductivity and being an electrical insulator; and separating the support substrate

Device substrate with high thermal conductivity and method of manufacturing the same

A method of transferring a device layer in a SOI wafer obtained by stacking a Si layer, an insulator layer, and the device layer to a transfer substrate, includes a step of temporarily bonding a surface on which the device layer is formed of the SOI wafer to a supporting substrate using an adhesive for temporary bonding, a step of removing the Si layer of the SOI wafer until the insulator layer is exposed and obtaining a thinned device wafer, a step of coating only the transfer substrate with an adhesive for transfer and then bonding the insulator layer in the thinned device wafer to the transfer substrate via the adhesive for transfer, a step of thermally curing the adhesive for transfer under a load at the same time as or after bonding, a step of peeling off the supporting substrate, and a step of removing the adhesive.

Provided is a composite substrate which is provided with: a single crystal silicon carbide thin filmhaving a thickness of 1&#x3bc;m or less; a handle substratewhich supports the single crystal silicon carbide thin filmand is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100&#xb0; C.; and an intervening layerwhich has a thickness of 1&#x3bc;m or less and is arranged between the single crystal silicon carbide thin filmand the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

Composite substrate, method for forming nanocarbon film, and nanocarbon film

A method for manufacturing a bonded substrate is provided, the bonded substrate including a single-crystal semiconductor substrate on a sintered-body substrate that has small warpage after bonding, has good thermal conductivity and small loss at high-frequency region and is suitable for high-frequency devices. Specifically, the method at least includes: applying coating to all of the faces of a sintered-body substrate, so as to obtain a support substrate including at least one layer of amorphous film; and bonding the support substrate and a single-crystal semiconductor substrate via the amorphous film. On a surface of the amorphous film on the support substrate to be bonded with the single-crystal semiconductor substrate, concentration of each of Al, Fe and Ca by ICP-MS method is less than 5.0&#xd7;10atoms/cm, and surface roughness Rms of the surface of the amorphous film is 0.2 nm or less.

Bonded substrate, method for manufacturing the same, and support substrate for bonding

A method for producing hybrid substrates which can be incorporated into a semiconductor production line involves: forming an ion-injection region () by injecting ions from the surface of a silicon substrate (); adhering the ion-injection surface of the silicon substrate and the surface of a sapphire substrate () to one another directly or with an insulating film () interposed therebetween; and then obtaining a hybrid substrate () having a silicon thin-film (semiconductor layer;) on the sapphire substrate (), by detaching the silicon substrate () in the ion-injection region (). This method is characterized in that the adhering to the silicon substrate () occurs after the sapphire substrate () is heat-treated in advance in a reducing atmosphere.

Method for producing hybrid substrates, and hybrid substrate

This composite substrate has a single-crystal semiconductor thin film () provided to at least the front surface of an inorganic insulating sintered-body substrate () having a thermal conductivity of at least 5 W/m&#xb7;K and a volume resistivity of at least 1&#xd7;10&#x3a9;&#xb7;cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate () and the single-crystal semiconductor thin film (), a silicon coating layer () comprising polycrystalline silicon or amorphous silicon. As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.

Composite substrate

A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region () by injecting ions from the surface of a silicon substrate (); adhering the ion-injection surface of the silicon substrate () and the surface of a sapphire substrate () to one another directly or with an insulating film () interposed therebetween; and then obtaining an SOS substrate () having a silicon layer () on the sapphire substrate (), by detaching the silicon substrate in the ion-injection region (). This method is characterized in that the orientation of the sapphire substrate () is a C-plane having an off-angle of 1 degree or less.

Method for producing SOS substrates, and SOS substrate

Disclosed is a composite substrate manufacturing method whereby, after bonding a semiconductor substrate () and a supporting substrate () to each other, the semiconductor substrate () is thinned, and a composite substrate () having a semiconductor layer () on the supporting substrate () is obtained. On the supporting substrate () surface to be bonded, a coating film () containing polysilazane is formed, a silicon-containing insulating film () is formed by performing firing by heating the coating film () to 600-1,200&#xb0; C., then, the semiconductor substrate () and the supporting substrate () are bonded to each other with the insulating film () therebetween, thereby suppressing bonding failures due to surface roughness and defects of the supporting substrate, and easily obtaining the composite substrate.

Composite substrate manufacturing method, and composite substrate

Disclosed is a composite substrate, which is provided with an inorganic insulating sintered substrate, which has a heat conductivity of 5 W/m&#xb7;K or more, and a volume resistivity of 1&#xd7;10&#x3a9;&#xb7;cm or more, and a single crystal semiconductor film, or a composite substrate, which is provided with the inorganic insulating sintered substrate, a single crystal semiconductor film, and a thin layer configured of at least one kind of material selected from among an oxide, a nitride, and an oxynitride, said thin layer being provided between the inorganic insulating sintered substrate and the single crystal semiconductor film. According to the present invention, a low-cost composite substrate with suppressed metal impurity contamination can be provided using an inorganic insulating sintered body, which is opaque to visible light, and which has excellent heat conductivity, and furthermore, a small loss in a high frequency region.

Disclosed is an electrolyte membrane-electrode assembly for direct methanol fuel cells, wherein a solid polymer electrolyte membrane is held between a pair of electrodes each composed of a catalyst layer coated over and/or impregnated in a porous supporting body. This electrolyte membrane-electrode assembly for direct methanol fuel cells is characterized in that the solid polymer electrolyte membrane is obtained by irradiating a resin membrane with radiation and graft-polymerizing a radically polymerizable monomer. The electrolyte membrane-electrode assembly for direct methanol fuel cells is further characterized in that the catalyst layer of the anode electrode comprises a catalyst, wherein platinum group metal or platinum-containing alloy particles having a particle size of 5 nm or less are supported by carbon particles, and a solid polymer electrolyte, and the noble metal amount in the catalyst layer of the anode electrode is not more than 5 mg/cm. By using such a catalyst, there can be obtained a direct methanol fuel cell wherein high output is achieved by using high methanol concentration.

Electrolyte membrane-electrode assembly for direct methanol fuel cell

This invention provides a process for producing an electrode catalyst for a fuel cell, comprising a first support step of producing metallic fine particles having an average particle diameter of 0.1 to 1.5 nm provided at regulated particle intervals on an electroconductive carbon carrier, and a second support step of growing a metal identical to or dissimilar to the metal using the metallic fine particles as a nucleus. In the first support step, the metallic fine particles are supported by an immersion method. The above constitution can provide an electrode catalyst for a fuel cell, which has a high level of percentage support, has a high level of dispersibility, and has improved methanol oxidation activity per weight of the catalyst. Further, when treatment in an atmosphere containing hydrogen is carried out at a low temperature below 100&#xb0; C., the methanol oxidation activity per active surface area can be improved without lowering the active area.

Process for producing electrode catalyst for fuel cell

Disclosed is a method for producing an electrode catalyst for a fuel cell, which comprises a Ru-containing metal microparticle supported on an electrically conductive carbon carrier, wherein MRuX[M=at least one member selected from H, Li, Na, K and NH; X=at least one member selected from Cl, Br, I and NO] is used as a precursor of Ru. It becomes possible to produce an electrode catalyst for a fuel cell, which is improved in the methanol oxidation activity per mass or surface area of the catalyst compared with a conventional Pt- and Ru-carrying carbon catalyst prepared by using a Ru raw material having an average valency of 3.

Method for production of electrode catalyst for fuel cell

A curable resin composition for fuel cell electrolyte films characterized by comprising (1) 100 parts by mass of a monomer having at least one ethylenically unsaturated group per molecule and having, per molecule, either at least one, tonically conductive group or at least one precursor group capable of giving an tonically conductive group through a chemical reaction, (2) 10-400 parts by mass of an oligomer which has, per molecule, at least two reactive groups copolymerizable with the ethylenically unsaturated group of the ingredient (1) and has a number-average molecular weight of 400 or higher, (3) 10-400 parts by mass of a fluororesin, and (4) 0-2,000 parts by mass of a solvent.

Curable resin composition for fuel cell electrolyte film and electrolyte film, process for producing the same, electrolyte film/electrode assembly, and process for producing the same

An electrolyte membrane for fuel cells is prepared by irradiating with radiation a composition comprising a radiation-curable liquid compound having proton conductivity for curing the liquid compound to form a cured film. The methods of the invention are successful in producing an electrolyte membrane and an electrolyte membrane/electrode assembly for fuel cells while satisfying both the requirements of productivity and cell-related properties including proton conduction and membrane strength.

Growing community of inventors

Annaka, Japan

Shigeru Konishi