Tokyo Electron Limited

Shigeru Kawamura

Teruyuki Hayashi

Mitsuaki Iwashita

Hiroki Ohno

Nobuo Konishi

Kazuya Dobashi

Masahito Sugiura

Kohei Tsugita

A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting tableon which a wafer W is placed, a heating unitfor heating a wafer end portion, ultraviolet application unitfor applying ultraviolet to the wafer end portion, and a gas flow forming unitfor forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.

Substrate cleaning apparatus, substrate cleaning method, and substrate processing apparatus

Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.

Substrate processing method and substrate processing apparatus

An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step.

Analysis method and analysis apparatus

The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called &ldquo;anchor effect&rdquo;.

Film forming method by radiating a plasma on a surface of a low dielectric constant film

A reactant gas is introduced into a process chamber under a temperature which is lower than reactive temperature of the reactant gas so that voids in a porous amorphous insulation film on a sample is filled with the introduced reactant gas. And chemical vapor deposition is carried out with heating the porous amorphous insulation film up to a temperature which is higher than the reactive temperature of the reactant gas to form a crystalline thin film on inner surfaces of the voids. Image data representing the porous amorphous insulation film in which the crystalline thin film is formed are generated with using a transmission electron microscope, and the porous amorphous insulation film is observed based on the image data to measure topographical characteristics of the porous amorphous insulation film such as void's size, porosity, etc.

Growing community of inventors

Nirasaki, Japan

Shigeru Kawamura