Disco Corporation

Sekisui Chemical Co., Ltd.

Other

Kyocera Corporation

Sekisui Chemical Corporation

Shigeru Danjo

Katsura Hayashi

Koichi Yajima

Akihiko Nishimoto

Masateru Fukuoka

Masahiko Kitamura

Munehiro Hatai

Yasuhiko Ohyama

Satoshi Hayashi

Yasuhiko Oyama

Kazuhiro Shimomura

A semiconductor wafer (W) where circuits are formed in the area divided by streets is split into semiconductor chips having individual circuits. By interposing an adhesive sheet, whose adhesive force is lowered by stimulation, between the semiconductor wafer (W) and the support plate (), the front side of the semiconductor wafer (W) is adhered to the support plate (), thereby exposing the rear face () of the semiconductor wafer (W). The rear face () of the semiconductor wafer (W) with the support plate () is ground. After the grinding is finished, the semiconductor wafer (W) held with the rear face () up is diced into semiconductor chips (C). The adhesive sheet is given stimulus to lower the adhesive force and the semiconductor chips (C) are removed from the support plate (). The semiconductor wafer and semiconductor chips are always supported by the support plate, avoiding damage and deformation.

Method for manufacturing semiconductor chip

It is an object of the invention to provide a method for manufacturing an IC chip wherein a wafer is prevented from being damaged and the ease of handling thereof is improved so that the wafer can be appropriately processed into IC chips, even if a thickness of the wafer is extremely reduced to approximately 50 &#x3bc;m. The invention provides a method for manufacturing an IC chip comprising, at least: the step of securing a wafer to a support plate via a support tape having a surface layer comprising an adhesive (A) containing a gas generating agent for generating a gas due to stimulation and a surface layer comprising an adhesive (B); the step of polishing said wafer with securing said wafer to said support plate via said support tape; the step of adhering a dicing tape to said polished wafer; the step of providing said stimulation to said adhesive (A) layer; the step of removing said support tape from said wafer; and the step of dicing said wafer, which comprises adhering said surface layer comprising adhesive (A) to said wafer and adhering said surface layer comprising adhesive (B) to said support plate in the step of securing said wafer to said support plate via said support tape, providing said stimulation while uniformly sucking under reduced pressure the entirety of said wafer from the dicing tape side thereof, and then removing said support tape from said wafer in the step of providing stimulation to said adhesive (A) layer and in the step of removing said support tape from said wafer.

IC chip manufacturing method

In a film with metal foil of the present invention, a metal foil is stuck to the surface of a resin film via an adhesive layer. The adhesive is formed by crosslinking an acrylic polymer obtained by the copolymerization of a (meth)acrylic acid ester with a carboxyl group-containing radically polymerizable monomer, with a polyfunctional compound having a functional group reactive with the carboxyl group. The film with metal foil is very useful for producing a multi-layer wiring board by the so-called transfer method. By using this film, there can be produced a multi-layer wiring board having a fine and highly dense wiring/circuit layer and having a very excellently flat surface.

Film with metal foil

Growing community of inventors

Osaka, Japan

Shigeru Danjo