Nissan Chemical Industries Limited

The University of Toyama

Shigeo Kimura

Takahiro Kishioka

Yuki Usui

Tomoya Ohashi

Tadashi Hatanaka

Hirokazu Nishimaki

Hiroto Ogata

Tomoyuki Enomoto

Yoshiomi Hiroi

Makiko Umezaki

Daisuke Sakuma

Taito Nishino

Hiromi Kitano

Tadashi Nakaji

Makoto Gemmei

There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

Cationically polymerizable resist underlayer film-forming composition

There is provided a new material that can form a finer pattern and can be applied to adsorption/adhesion control of various cell species, proteins, viruses, and the like without the limitation of the light source. A light-degradable material comprising: a moiety that is capable of bonding to a surface of a substrate through a siloxane bond; and a structural unit of Formula (2-a) and/or Formula (2-b): (where Rto Rare saturated linear alkyl groups; X is a hydrogen atom or an alkyl group; Z is a carbanion or a sulfo anion; Q is an ester bond group, a phosphodiester bond group, an amido bond group, an alkylene group, or an phenylene group or a combination of these divalent groups; mis an integer of 1 to 200, and n is an integer of 1 to 10).

Light-degradable material, substrate, and method for patterning the substrate

A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a fourth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

Pattern forming method using resist underlayer film

There is provided a resist underlayer film-forming composition having excellent solubility in a solvent containing propylene glycol monomethyl ether as a main component. A resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1a) or Formula (1c) and a structural unit of Formula (1b) and a solvent containing more than 50% by mass of propylene glycol monomethyl ether, wherein in the polymer, the structural unit of Formula (1a) or Formula (1c) and the structural unit of Formula (1b) are arranged alternately. (In Formulae (1a) and (1b), Q is a phenylene group or a naphthylene group, m is 1 or 2, and each of n is independently 0 or 1).

Resist underlayer film-forming composition

There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where Ais Formula (2) or Formula (3): E is Formula (4) or Formula (5): Rand Rare each independently a Calkyl group, Ris a hydrogen atom or a methyl group, Rand Rare each independently a Calkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).

Organic silicon compound and silane coupling agent containing the same

A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group.

Photosensitive organic particles

There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where Rs are independently a methyl group or an ethyl group; Xs are independently a Clinking group; and Zs are independently a Calkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.

Monolayer or multilayer forming composition

A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a Cfluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3); 

Photosensitive resist underlayer film forming composition

There is provided an anti-reflective coating forming composition for use in a lithography of the manufacture of semiconductor devices and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. The anti-reflective coating forming composition comprises a compound having at least two vinyl ether groups, an alkali-soluble compound having at least two phenolic hydroxy groups or carboxyl groups, a photoacid generator, and a solvent.

Anti-reflective coating forming composition containing vinyl ether compound

There is provided an anti-reflective coating forming composition for use in a lithography and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. Concretely, the composition comprises a polyamic acid produced from a tetracarboxylic dianhydride compound and a diamine compound having at least one carboxyl group, a compound having at least two epoxy groups, and a solvent.

Anti-reflective coating forming composition containing polyamic acid

There is provided an anti-reflective coating forming composition for lithography comprising a polymer compound, a crosslinking compound, a crosslinking catalyst, a sulfonate compound and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.

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Toyama, Japan

Shigeo Kimura