Mitsubishi Denki Kabushiki Kaisha

Shigemitsu Maruno

Yasunori Tokuda

Taisuke Furukawa

Takumi Nakahata

Satoshi Yamakawa

Naruhisa Miura

Toshiyuki Oishi

Kohei Sugihara

Yasutaka Nishioka

A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.

Semiconductor device and manufacturing method thereof

Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

Semiconductor device having reduced sheet resistance of source/drain regions

Method of manufacturing semiconductor device having sidewall portions removed

According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600&deg; C. to 900&deg; C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.

Method of fabricating semiconductor device

Growing community of inventors

Hyogo, Japan

Shigemitsu Maruno