Tokyo Electron Limited

Other

Tohoku University

Shigemi Murakawa

Toshio Nakanishi

Satoru Kawakami

Shigenori Ozaki

Takuya Sugawara

Seiji Matsuyama

Toshiaki Hongoh

Mitsuhiro Yuasa

Yoshihide Tada

Toshikazu Kumai

Tadahiro Ohmi

Masaki Hirayama

Yasuyuki Shirai

Takaaki Matsuoka

Tetsuya Goto

Masafumi Kitano

Kohei Watanuki

The present invention provides a rotating semi-batch ALD device and process which ensure high productivity, minimal particle formation, low gas consumption and high coverage during the production of semiconductors, liquid crystals, LEDs and/or solar cells. The rotating semi-batch ALD device and ALD process are characterized in that: a reaction gas supply means is configured from a shower plate for evenly discharging gas, a cavity for allowing gas to flow down gradually, and a partition wall surrounding the shower plate and the cavity; and a purge gas supply means is configured from a shower plate that causes gas to flow evenly at a high flow velocity in the transverse direction in the narrow gap between the purge gas supply means and substrates being treated.

Rotating semi-batch ALD device

A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiOcomposition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window

A gate insulation film () of a MISFET () is constituted of a silicon oxide film (), silicon nitride film (), and high-permittivity film (). The silicon oxide film () and silicon nitride film () are formed by microwave plasma processing with a radial line slot antenna.

Forming method and forming system for insulation film

A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.

Process for producing materials for electronic device

The silicon oxide film () and silicon nitride film () are formed by microwave plasma processing with a radial line slot antenna.

Forming system for insulation film

A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconductor layer with excellent electrical characteristics. A substrate incorporating single-crystal silicon as a main component is CVD-treated to form an insulating layer. The substrate is then exposed to a plasma generated from a process gas by microwave radiation from a plane antenna having a plurality of slots, to thereby modify the insulating film.

Method of producing electronic device material

In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Semiconductor manufacturing apparatus

In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

Growing community of inventors

Minato-ku, Japan

Shigemi Murakawa