Hamamatsu-Photonics K.k.

Shigehisa Oguri

Eiji Inuzuka

Yasushi Hiruma

Kouji Suzuki

Wataru Nagata

The present invention relates to an inspection system for transparently taking an image of inside of a semiconductor device to analyze anomalous occurrence. First, image data obtained under infrared ray illumination are converted into a first left-to-right reversed image data in which the obtained image data are reversed left to right and the first left-to-right reversed image data are stored. Next, very weak light emitted from an anomalous portion when the semiconductor device is biased is picked up under no illumination. Then, image data of very weak light is converted into a second left-to-right reversed image data in which the image data of weak light are reversed left to right. The first and second left-to-right image data are superimposed to superimpose the image specifying the anomalous location on an image of chip patterns in the semiconductor device and the superimposed image is displayed. Further, in the infrared-ray epi-irradiation means, an optical filter made of the same material as that of the semiconductor device to be measured is used to form infrared rays for illumination, so that when the back surface of the semiconductor device is irradiated with infrared rays produced by the optical filter, light having a short wavelength which is easily reflected on the surface of the semiconductor device is interrupted and infrared rays having high transmittance against the semiconductor device can be obtined.

Semiconductor device inspection system

A semiconductor device inspection system having an improved measurement accuracy and in operability. A semiconductor device is observed from the bottom surface side. First, image data obtained upon image pickup under infrared illumination is converted into first left-to-right-reversed image data corresponding to a left-to-right-reversed image and the first reversed image data is stored. Then an image is obtained under no illumination from very weak light emitted from an abnormal portion when a bias is applied to the semiconductor device. Image data of the very weak light image is then converted into second left-to-right-reversed image data corresponding to a left-to-right-reversed image. The first and second left-to-right-reversed image data are superimposedly added to each other and a superimposed image is displayed with the abnormal portion being superimposed on a chip pattern as seen from the top surface of the semiconductor device.

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Hamamatsu, Japan

Shigehisa Oguri