Dainippon Screen Mfg. Co., Ltd.

Screen Holdings Co., Ltd.

Screen Semiconductor Solutions Co., Ltd.

Shigehiro Goto

Keiji Matsuchika

Koji Nishi

Akihiko Morita

Toru Momma

Atsushi Tanaka

Hiroshi Kobayashi

Minobu Matsunaga

Yasuhiro Fukumoto

Kenichiro Jo

Masakazu Sanada

Yukihiko Inagaki

Masahito Kashiyama

Akira Yamaguchi

Katsushi Yoshioka

Tomohiro Matsuo

Tomohiro Goto

Kayoko Nakano

A treating liquid vaporizing apparatus includes a buffer tank for storing a treating liquid, a vaporizing container connected to the buffer tank for vaporizing the treating liquid, a further vaporizing container connected to the buffer tank in parallel with the vaporizing container for vaporizing the treating liquid, a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the vaporizing container, and a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the further vaporizing container.

Treating liquid vaporizing apparatus

An upper plate on which a substrate is placed is cooled or heated by a thermal processor. The temperature of the thermal processor is adjusted by a temperature adjuster. The temperature of the upper plate is detected. A control value that is to be applied to the temperature adjuster in order to maintain the temperature of the upper plate at a set value is calculated as a control arithmetic value on the basis of the detected temperature. When the control arithmetic value decreases to a value less than a second threshold value, a first control that applies the control arithmetic value to the temperature adjuster is performed. When the control arithmetic value increases to a value not less than a first threshold value, a second control that applies a control set value higher than the control arithmetic value to the temperature adjuster is performed.

Thermal processing apparatus and thermal processing method

Substrate treating apparatus including a cover that covers a substrate on a plate. The cover undersurface is substantially horizontal and adjacent to a surface of the substrate. Through a gas flow path, a treatment gas is supplied to the substrate. The gas flow path includes a swirl chamber, a diameter contraction chamber, and a diameter expansion chamber. In the swirl chamber, the treatment gas flows around the central axis. The diameter contraction chamber is disposed below and in communication with the swirl chamber, and has an inner diameter that decreases from its upper end toward its lower end. The diameter expansion chamber is disposed below and in communication with the diameter contraction chamber, and has an inner diameter that increases from its upper end toward its lower end. The lower end of the diameter expansion chamber includes an opening on the undersurface of the cover.

Substrate treating apparatus and treatment gas supplying nozzle

A processing liquid is supplied onto a substrate rotated by a spin chuck in a coating processing unit so that a film of the processing liquid is formed, and a rinse liquid is supplied to a peripheral edge of the substrate so that a processing liquid on the peripheral edge of the substrate is removed. An edge cut width between a position of an outer peripheral portion of the substrate rotated by the spin chuck in an edge exposure unit and a position of an outer peripheral portion of a film on the substrate is detected. Based on the detected edge cut width, a positional deviation of the center of the substrate held in the spin chuck from a rotation center of the spin chuck in the coating processing unit is determined while a supply state of the rinse liquid by an edge rinse nozzle is determined.

Substrate processing apparatus and substrate processing method

A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

Substrate heat treatment apparatus

A heat-treating plate has support elements projecting from an upper surface thereof. The support elements are located at apexes of equilateral triangles arranged regularly and continually. The heat-treating plate and a substrate placed on the support elements form a minute space therebetween which is sealed by a sealer. The substrate is sucked by reducing the pressure in the minute space to a negative pressure through exhaust bores. Since all the distances between adjoining support elements are equal, the substrate sags in the same amount between these support elements. With such arrangement of the support elements, sagging of the substrate is inhibited efficiently by a reduced number of support elements.

A heat-treating plate has, arranged on the upper surface thereof, support elements for supporting a substrate, and a first sealer for closing lateral areas of a first space formed between the heat-treating plate and the substrate supported. Further, second sealers ring-shaped in plan view are arranged around openings of perforations accommodating transfer pins. The second sealers close lateral areas of second spaces opposed to the perforations. Gastightness of the first space excluding the second spaces is never impaired through the perforations. By exhausting gas from the first space through exhaust bores, the substrate is effectively sucked for heat treatment.

A resin block has a treating solution channel extending between and opening at front and back surfaces thereof. Heat conductive members are face-bonded to the front and back surfaces of the resin block, respectively, for closing the channel. Consequently, no air is present between the resin block and heat conduction members, thereby improving the efficiency of heat exchange. A nozzle of simple construction is realized only by face-bonding the two heat conductive members to the open front and rear surfaces of the resin block. Temperature control plates hold the heat conductive members along with the resin block to effect a temperature control, whereby the temperature of a treating solution in the treating solution channel is controlled effectively through the heat conductive members. The treating solution adjusted to a desired temperature is delivered from a discharge opening to a substrate for performing substrate treatment with high accuracy.

Treating solution supply nozzle, a substrate treating apparatus having this nozzle, and a method of manufacturing a treating solution supply nozzle

A substrate heat treatment apparatus for heat-treating a substrate includes a bake plate having projections on an upper surface thereof, a seal unit disposed peripherally of the upper surface of the bake plate for closing a lateral area of a minute space formed between a lower surface of the substrate and the upper surface of the bake plate when the substrate is placed on the bake plate, and exhaust bores for exhausting gas from the minute space. The substrate placed on the bake plate is heat-treated in a state of the gas exhausted from the minute space through the exhaust bores.

A chemical treating apparatus for performing a predetermined treatment of a principal surface of a substrate by delivering a treating solution thereto. The apparatus includes a treating solution delivery nozzle for delivering the treating solution to the principal surface of a substrate. The nozzle has a treating solution reservoir adjacent a tip end thereof for storing the treating solution. A temperature control device holds the treating solution reservoir to control the temperature of the treating solution in the treating solution reservoir through heat exchange with the treating solution.

Chemical treating apparatus

An apparatus for applying a coating solution to a surface of a substrate to form a coating film of desired thickness thereon. The apparatus includes a rotary supporting device for supporting and spinning the substrate in horizontal posture, a solvent spraying device for spraying a solvent to the substrate, a coating solution supplying device for supplying the coating solution to the substrate, a storage device for storing a processing program stipulating varied points and periods of time, a timer acting as a reference for each point or period of time stored in the storage, and a controller operable to perform controls based on the points and periods of time and with reference to the timer.

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Kyoto, Japan

Shigehiro Goto